Journal ArticleDOI
Doped Layer Optimization for Silicon Heterojunctions by Injection-Level-Dependent Open-Circuit Voltage Measurements
Martin Bivour,Markus Reusch,Sebastian Schröer,Frank Feldmann,Jan Temmler,Heiko Steinkemper,Martin Hermle +6 more
TLDR
In this paper, the authors used injection-level-dependent open-circuit voltage (Suns- Voc) measurements for the characterization and optimization of the doped amorphous silicon (a-Si:H) layers.Abstract:
Besides passivation of the c-Si absorber, provided mainly by the undoped buffer layer, the net doping of the silicon thin films plays a major role in the performance of silicon-based heterojunction (SHJ) solar cells. However, junction engineering is complex as high net doping often interferes with the interface passivation and the optical properties of the silicon thin films. We show that injection-level-dependent open-circuit voltage (Suns- Voc) measurements are a simple and valuable method for the characterization and optimization of the doped amorphous silicon (a-Si:H) layers. It is shown by experiment and device simulations that at high illumination intensities the Suns- Voc characteristic exhibits a strong signature of defect recombination within the a-Si:H, which is determined by the a-Si:H doping and the interfacial transparent conducting oxide (TCO) properties. This fact is exploited for a qualitative interpretation of the interplay between a-Si:H and the interfacial TCO properties. As a clear correlation between the Suns- Voc characteristic and the maximum power point conditions of the devices exists, fill factor (FF) losses attributed to the doped a-Si:H and the interfacial TCO properties can 1) be easily predicted in the early stage of device optimization on simple test structures, or 2) these FF losses can be identified and distinguished from other FF losses in the final device.read more
Citations
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Journal ArticleDOI
Tunnel oxide passivated contacts as an alternative to partial rear contacts
Frank Feldmann,Martin Bivour,Christian Reichel,Heiko Steinkemper,Martin Hermle,Stefan W. Glunz +5 more
TL;DR: In this article, a boron-doped passivated rear contact for p-type solar cells (p-TOPCon) is proposed as an alternative to partial rear contact (PRC) cells.
Journal ArticleDOI
Molybdenum and tungsten oxide: High work function wide band gap contact materials for hole selective contacts of silicon solar cells
TL;DR: In this paper, the high work function metal oxides, tungsten oxide (WOx) and molybdenum oxide (MoOx), were investigated regarding their ability to form a hole-selective contact for a crystalline silicon absorber.
Journal ArticleDOI
Carrier-selective contacts for Si solar cells
TL;DR: A polysilicon emitter related solar cell achieving both a high open-circuit voltages (Voc) and a high fill factor (FF) was reported in this article, where the passivation mechanism of these so-called tunnel oxide passivated contacts was outlined and the impact of TCO (transparent conductive oxide) deposition on the injection-dependent lifetime characteristic of the emitter as well as its implications on FF was discussed.
Journal ArticleDOI
Efficient carrier-selective p- and n-contacts for Si solar cells
TL;DR: In this paper, the authors proposed a carrier-selective contact with a wide bandgap semi-crystalline Si layer, which formed a heterostructure with the crystalline silicon substrate.
Journal ArticleDOI
23.5%-efficient silicon heterojunction silicon solar cell using molybdenum oxide as hole-selective contact
Julie Dreon,Quentin Jeangros,Jean Cattin,Jan Haschke,Luca Antognini,Christophe Ballif,Mathieu Boccard +6 more
TL;DR: In this paper, the influence of the MoOx and intrinsic a-Si:H thicknesses on current-voltage properties and discuss transport and performance-loss mechanisms is discussed. But the authors focus on the front-side hole-selective layer.
References
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Ronald A. Sinton,Andres Cuevas +1 more
TL;DR: In this paper, a simple method for implementing the steady-state photoconductance technique for determining the minority-carrier lifetime of semiconductor materials is presented, using a contactless instrument.
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TL;DR: In this article, a new record conversion efficiency of 24.7% was achieved at the research level by using a heterojunction with intrinsic thin-layer structure of practical size at a 98-μm thickness.
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High-efficiency Silicon Heterojunction Solar Cells: A Review
TL;DR: Silicon heterojunction solar cells as mentioned in this paper consist of thin amorphous silicon layers deposited on crystalline silicon wafers, which enables energy conversion efficiencies above 20% at the industrial production level.
Journal ArticleDOI
Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells
TL;DR: In this article, the influence of the improved state-of-the-art parameters on the limiting efficiency for crystalline silicon solar cells under 1-sun illumination at 25°C, by following the narrow-base approximation to model ideal solar cells was analyzed.
Journal ArticleDOI
Substitutional doping of amorphous silicon
W. E. Spear,P. G. Le Comber +1 more
TL;DR: In this article, it was shown that the electrical conductivity of a tetrahedral amorphous semiconductor can be controlled over many orders of magnitude by doping with substitutional impurities.