Proceedings ArticleDOI
Drift compensation using bulk feedback in a neural recording system based on open-gate FET
Ashwin K. Vijayan,Sreejish Sreenivasan,Deleep R. Nair,M. Ramasubba Reddy +3 more
- pp 98-101
TLDR
In this article, the authors present a drift compensation technique for neural recording systems that use open-gate FET sensors by employing feedback to the bulk of the FET, which has been validated by simulating a sensor system with practical drift parameters.Abstract:
The shift from micro-electrode array based neural recording system to an open-gate FET based system, in which direct electrical interaction with a neuron in a nanostructure circuit offers significant advantages. However, the equivalent capacitance (C eq ) of the FET sensor undergoes a slow, monotonic change due to hydration of the insulator layers leading to a threshold voltage drift which ultimately manifest as a drift in the drain current. This paper presents a drift compensation technique for neural recording systems that use open-gate FET sensors by employing feedback to the bulk of the FET. The efficiency of this technique has been validated by simulating a sensor system with practical drift parameters. While the current drift without a feedback was found to be more than 5% of the drain current before hydration, the simulation results show that the current drift is less than 0.042% when there is an active feedback. In general, this technique is applicable to other systems that use open-gate FET based sensors such as the ISFETs.read more
References
More filters
Journal ArticleDOI
Noise Limits of CMOS Current Interfaces for Biosensors: A Review
TL;DR: The paper presents, investigates and compares charge-sensitive amplifier architectures used in both continuous-time and discrete-time approaches, along with their design trade-offs involving noise floor, sensitivity to stray capacitance and bandwidth, and provides analog designers with helpful design rules and analytical tools.
Journal ArticleDOI
Extracellular Potential Recordings by Means of a Field Effect Transistor Without Gate Metal, Called OSFET
TL;DR: It appears that extracellular potentials measured with an OSFET-electrode have an extended frequency range, with respect to conventional potential measurements (0 ¿< f ¿ < 45 K c/s).
Journal ArticleDOI
CMOS readout circuitry for ISFET microsystems
TL;DR: CIMP (complementary ISFET/MOSFET pair)—a novel technique for implementation of readout interface in CMOS IsFET-based microsystems is described, which allows body effect elimination, temperature compensation and design simplicity, while maintaining constant biasing of ISFet sensor.
Journal ArticleDOI
An analytical technique for counteracting drift in ion-selective field effect transistors (ISFETs)
TL;DR: In this paper, a method for correction of ISFET drift is presented, which takes advantage of the relatively small instantaneous drift rate in IS-FETs to compensate for the drift signal superimposed on the sensor output.
Proceedings ArticleDOI
A Current-Sensitive Front-End Amplifier for Nano-Biosensors with a 2MHz BW
TL;DR: Active resistors up to 300GOmega operating down to the fA range are implemented in the feedback path of an integrator-differentiator transimpedance amplifier for high-sensitivity current measurements.