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Journal ArticleDOI

Effect of excess of bismuth doping on dielectric and ferroelectric properties of BaBi4Ti4O15 ceramics

TLDR
In this article, the effect of excess bismuth oxide Bi2O3 (2 − 10 ) for processing BaBi4Ti4O15 (BBT) ceramics by solid state reaction has been investigated.
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This article is published in Ceramics International.The article was published on 2015-04-01. It has received 30 citations till now. The article focuses on the topics: Bismuth & Dielectric.

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Journal ArticleDOI

Ytterbium doping effects on structural, optical and electrical properties of Bi4Ti3O12 system

TL;DR: The influence of ytterbium doping on the structural, optical, dielectric and electrical properties of synthesized compounds were investigated in this article, where all samples are homogenous and crystallize in the orthorhombic system with the Fmmm space group.
Journal ArticleDOI

Dielectric properties of SrBi 1.8 RE 0.2 Nb 2 O 9 (RE = Yb, Tm, Tb, Gd, Er, Sm and Ce) ceramics

TL;DR: In this paper, the structure, electrical and dielectric properties of SrBi 1.8 RE 0.2 Nb 2 O 9 doped with one of seven lanthanide ions (RE = Yb, Tm, Tb, Dy, Er, Sm and Ce) are investigated.
Journal ArticleDOI

Sol–gel synthesis and characterization of a new four-layer K0.5Gd0.5Bi4Ti4O15 Aurivillius phase

TL;DR: In this article, a citrate-based sol-gel route was used to synthesize a pure four-layer Aurivillius phase with an orthorhombic structure.
Journal ArticleDOI

Dielectric relaxation study of the ceramic matrix BaBi 4 Ti 4 O 15 :Bi 2 O 3

TL;DR: In this paper, the dielectric properties of a BaBi4Ti4O15 ceramic were investigated at data temperature range from 340 to 520 °C, where the authors showed that the electrical properties of the material are strongly dependent on temperature.
Journal ArticleDOI

Dielectric properties of gadolinium-doped SrBi2Nb2O9 ceramics

TL;DR: In this article, the temperature dependence of dielectric behavior is investigated in the temperature range from room temperature to 500°C at various frequencies, according to modified Curie-Weiss law.
References
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Journal ArticleDOI

Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals

TL;DR: In this article, the piezoelectric properties of relaxor based ferroelectric single crystals, such as Pb(Zn1/3Nb2/3)O3 and PbTiO3, were investigated for electromechanical actuators.
Journal ArticleDOI

Ferroelectric ceramics : History and technology

TL;DR: Ferroelectric ceramics have been the heart and soul of several multibillion dollar industries, ranging from high-dielectric-constant capacitors to later developments in piezoelectric transducers, positive temperature coefficient devices, and electrooptic light valves as mentioned in this paper.
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Fatigue-free ferroelectric capacitors with platinum electrodes

TL;DR: In this article, the authors describe the preparation and characterization of thin-film capacitors using ferroelectric materials from a large family of layered perovskite oxides, exemplified by SrBi2Ta2O9, SRBi2NbTaO9 and SrBi4Ta4O15.
Journal ArticleDOI

Lanthanum-substituted bismuth titanate for use in non-volatile memories

TL;DR: In this paper, the authors show that lanthanum-substituted bismuth titanate (SBT) thin films provide a promising alternative for FRAM applications, since they are fatigue-free on metal electrodes, they can be deposited at temperatures of ∼650°C and their values of Pr are larger than those of the SBT films.
Journal ArticleDOI

Recent progress in relaxor ferroelectrics with perovskite structure

TL;DR: In this article, the lattice dynamics and the peculiar dielectric relaxation in relaxors are discussed, and theoretical models for the mechanisms of PNR formation and freezing into nonergodic glassy state are also presented.
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