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Journal ArticleDOI

Elasticity and polarization of GaxAl1-xN alloys subjected to uniaxial and biaxial compression

TLDR
In this paper, the elasticity and polarization of GaxAl1-xN alloys subjected to uniaxial and homogeneous baoXial compression are calculated using first-principles methods.
Abstract
Elasticity and polarization of GaxAl1-xN alloys subjected to uniaxial and homogeneous biaxial compression are calculated using first-principles methods. The uniaxial compression along the c-axis reduces Young’s modulus along the c-axis, and enhances bulk modulus and total polarization, whereas the biaxial compression in the plane perpendicular to the c-axis enhances bulk and Young’s moduli. It is also found that when the in-plane biaxial compression is applied by constraining the a-axis lattice constant to that of AlN, the bulk and Young’s moduli dramatically increase with increasing Ga concentration, and the total polarization could be suppressed, even annihilated, and finally enhanced by controlling Ga concentration.

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Citations
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Journal ArticleDOI

AlGaN/GaN diaphragm-based pressure sensor with direct high performance piezoelectric transduction mechanism

TL;DR: In this paper, the piezoelectric response of AlGaN/GaN circular HEMT pressure sensing device integrated on a diaphragm was investigated and supported by the finite element method modeling.
Journal ArticleDOI

Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN

TL;DR: In this article, a group of InAlN films was fabricated by molecular beam epitaxy and investigated by X-ray diffraction, transmission electron microscopy and element nano-analyses.
Journal ArticleDOI

Strain-induced structural, band-structure and piezoelectric evolutions in Al0.5Ga0.5N alloy

TL;DR: In this paper, structural phase transition, band structure, and piezoelectric response of Al 0.5Ga0.5N alloy were systematically investigated using first-principle calculations.
Journal ArticleDOI

A New Phase of GaN

TL;DR: In this article, the structural, mechanical, and electronic properties of orthorhombic GaN (Pnma-GaN) were investigated at ambient pressure by using first-principles calculations method with the ultrasoft pseudopotential scheme.
Proceedings ArticleDOI

Finite element analysis of AlGaN/GaN micro-diaphragms with diamond coating

TL;DR: In this article, a pressure sensor based on diamond-coated AlGaN/GaN diaphragm with integrated high electron mobility transistor (HEMT) is presented.
References
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Journal ArticleDOI

Phonons and related crystal properties from density-functional perturbation theory

TL;DR: In this paper, the current status of lattice-dynamical calculations in crystals, using density-functional perturbation theory, with emphasis on the plane-wave pseudopotential method, is reviewed.
Journal ArticleDOI

Theory of polarization of crystalline solids

TL;DR: It is shown that physically $\ensuremath{\Delta}P can be interpreted as a displacement of the center of charge of the Wannier functions.
Journal ArticleDOI

Spontaneous polarization and piezoelectric constants of III-V nitrides

TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
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