Journal ArticleDOI
Elasticity and polarization of GaxAl1-xN alloys subjected to uniaxial and biaxial compression
TLDR
In this paper, the elasticity and polarization of GaxAl1-xN alloys subjected to uniaxial and homogeneous baoXial compression are calculated using first-principles methods.Abstract:
Elasticity and polarization of GaxAl1-xN alloys subjected
to uniaxial and homogeneous biaxial compression are calculated using
first-principles methods. The uniaxial compression along the c-axis
reduces Young’s modulus along the c-axis, and enhances bulk
modulus and total polarization, whereas the biaxial compression in
the plane perpendicular to the c-axis enhances bulk and Young’s
moduli. It is also found that when the in-plane biaxial compression
is applied by constraining the a-axis lattice constant to that of
AlN, the bulk and Young’s moduli dramatically increase with
increasing Ga concentration, and the total polarization could be
suppressed, even annihilated, and finally enhanced by controlling Ga
concentration.read more
Citations
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Journal ArticleDOI
AlGaN/GaN diaphragm-based pressure sensor with direct high performance piezoelectric transduction mechanism
TL;DR: In this paper, the piezoelectric response of AlGaN/GaN circular HEMT pressure sensing device integrated on a diaphragm was investigated and supported by the finite element method modeling.
Journal ArticleDOI
Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN
José Manuel,Francisco M. Morales,Juan G. Lozano,David González,Rafael García,T. Lim,Lutz Kirste,Rolf Aidam,Oliver Ambacher +8 more
TL;DR: In this article, a group of InAlN films was fabricated by molecular beam epitaxy and investigated by X-ray diffraction, transmission electron microscopy and element nano-analyses.
Journal ArticleDOI
Strain-induced structural, band-structure and piezoelectric evolutions in Al0.5Ga0.5N alloy
TL;DR: In this paper, structural phase transition, band structure, and piezoelectric response of Al 0.5Ga0.5N alloy were systematically investigated using first-principle calculations.
Journal ArticleDOI
A New Phase of GaN
TL;DR: In this article, the structural, mechanical, and electronic properties of orthorhombic GaN (Pnma-GaN) were investigated at ambient pressure by using first-principles calculations method with the ultrasoft pseudopotential scheme.
Proceedings ArticleDOI
Finite element analysis of AlGaN/GaN micro-diaphragms with diamond coating
J. Dzuba,Gabriel Vanko,Marian Vojs,Ivan Rýger,Tibor Ižák,Vít Jirásek,Vladimír Kutiš,T. Lalinský +7 more
TL;DR: In this article, a pressure sensor based on diamond-coated AlGaN/GaN diaphragm with integrated high electron mobility transistor (HEMT) is presented.
References
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Journal ArticleDOI
Phonons and related crystal properties from density-functional perturbation theory
TL;DR: In this paper, the current status of lattice-dynamical calculations in crystals, using density-functional perturbation theory, with emphasis on the plane-wave pseudopotential method, is reviewed.
Journal ArticleDOI
Theory of polarization of crystalline solids
TL;DR: It is shown that physically $\ensuremath{\Delta}P can be interpreted as a displacement of the center of charge of the Wannier functions.
Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
First-principles computation of material properties: the ABINIT software project
Xavier Gonze,Jean-Michel Beuken,Razvan Caracas,F Detraux,M Fuchs,Gian-Marco Rignanese,Luc Sindic,Matthieu J. Verstraete,G. Zérah,F. Jollet,Marc Torrent,A Roy,Masayoshi Mikami,Philippe Ghosez,Jean-Yves Raty,D. C. Allan +15 more
TL;DR: ABINITv3.0 is described, in which freedom of sources, reliability, portability, and self-documentation are emphasised, in the development of a sophisticated plane-wave pseudopotential code.