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Journal ArticleDOI

Electron field emission from silicon nanowires

TLDR
In this article, a continuous SiNW film was prepared by grinding the pieces of sponge-like SiNWs to powder, then dispersing and sticking the powder onto a Si wafer.
Abstract
Silicon nanowires (SiNWs) were synthesized using laser ablation. A continuous SiNW film was prepared by grinding the pieces of sponge-like SiNWs to powder, then dispersing and sticking the powder onto a Si wafer. The field emission characteristics of the SiNW film were studied based on current–voltage measurements and the Fowler–Nordheim equation. The electron field emission increased with decreasing diameter of SiNWs. A hydrogen plasma treatment of the SiNW film aimed at reducing the oxide overlayer improved the emission uniformity of the film.

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Citations
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Journal ArticleDOI

Low-field electron emission from tetrapod-like ZnO nanostructures synthesized by rapid evaporation

TL;DR: The turn-on field of the synthesized tetrapod-like ZnO nanostructures was found to be as low as 1.6 V/μm at the current density of 1 μA/cm2 as discussed by the authors.
Journal ArticleDOI

Bulk synthesis of silicon nanowires using a low-temperature vapor–liquid–solid method

TL;DR: In this paper, the authors demonstrate a low-temperature vapor-liquid-solid synthesis method that uses liquid-metal solvents with low solubility for silicon and other elemental semiconductor materials.
Journal ArticleDOI

Fabrication of individually seeded nanowire arrays by vapour–liquid–solid growth

TL;DR: In this article, an electron beam lithography and metal lift-off method was used to pattern InP(111)B substrates with catalysing gold particles, and then the arrays were grown from the gold particles using metal-organic vapour phase epitaxy.
Journal ArticleDOI

Field emission from MoO3 nanobelts

TL;DR: In this article, a single-crystalline MoO3 nanobelts were prepared on a Si wafer by heating a Mo foil in air, and a threshold field of 12.9 V/μm was determined at a spacing of 80 μm.
Journal ArticleDOI

Nanowires: properties, applications and synthesis via porous anodic aluminium oxide template

TL;DR: The physical properties of nanowires are influenced by the morphology of the nanowire, diameter dependent band gap, carrier density of states etc. as mentioned in this paper, which is different from that of their parent counterpart.
References
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Journal ArticleDOI

Helical microtubules of graphitic carbon

Sumio Iijima
- 01 Nov 1991 - 
TL;DR: Iijima et al. as mentioned in this paper reported the preparation of a new type of finite carbon structure consisting of needle-like tubes, which were produced using an arc-discharge evaporation method similar to that used for fullerene synthesis.
Journal ArticleDOI

Electron Emission in Intense Electric Fields

TL;DR: In this article, the main features of the extraction of electrons from cold metals by intense electric fields are well known, and an approximate theory of the effect was first developed by Schottky.
Journal ArticleDOI

A laser ablation method for the synthesis of crystalline semiconductor nanowires

TL;DR: Studies carried out with different conditions and catalyst materials confirmed the central details of the growth mechanism and suggest that well-established phase diagrams can be used to predict rationally catalyst materials and growth conditions for the preparation of nanowires.
Journal ArticleDOI

Field emission from single-wall carbon nanotube films

TL;DR: In this article, the authors report on the field emission properties of single-wall carbon nanotube films, with emphasis on current-versus-voltage (I-V) characteristics and current stability.
Journal ArticleDOI

A nanotube-based field-emission flat panel display

TL;DR: In this paper, a matrix addressable diode flat panel display has been fabricated using a carbon nanotube-epoxy composite as the electron emission source and field-emission uniformity has been confirmed by measuring the I-V curves of pixels across the panel.
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