Journal ArticleDOI
Exciton localization and temperature stability in self‐organized InAs quantum dots
TLDR
In this paper, the temperature effect on exciton localization in self-organized InAs quantum dots was investigated and the energy for excitons in reference quantum well and quantum dot was found to be 2 and 7 meV, respectively.Abstract:
We investigated the temperature effect on exciton localization in self‐organized InAs quantum dots Quenching energy for excitons in reference quantum well and quantum dots was found to be 2 and 7 meV, respectively Thermoactivation energy of electron‐hole emission through a GaAs barrier in the quantum dots was measured as 46 meV We observed an unusual decrease of photoluminescence peak full width at half maximum with temperature, suggesting suppression of nonpredominant size quantum dot emissions due to carrier tunneling between nearby dotsread more
Citations
More filters
Journal ArticleDOI
Quantum-Dot-Tagged Reduced Graphene Oxide Nanocomposites for Bright Fluorescence Bioimaging and Photothermal Therapy Monitored In Situ
TL;DR: The nanocomposite internalized into targeted tumor cells display bright fluorescence from the QDs, and by absorbing NIR radiation incident on the rGO and converting it into heat, they also cause simultaneous cell death and fluorescence reduction.
Journal ArticleDOI
Quantum dot opto-electronic devices
TL;DR: In this article, a self-organized In(Ga)As/GaAs quantum box is grown by molecular beam expitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) on GaAs, InP, and other substrates and is incorporated in microelectronic and opto-electronic devices.
Journal ArticleDOI
Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers
TL;DR: In this article, the room-temperature operating characteristics of InGaAs/GaAs self-organised quantum dot lasers grown by molecular beam epitaxy were reported, and the emission wavelength was 1.028 µm and Jth = 650 A/cm2 for a 90 µm × 1 mm broad-area laser.
Journal ArticleDOI
Photoluminescence study of CdTe/ZnTe self-assembled quantum dots
TL;DR: In this article, optical properties of CdTe self-assembled quantum dots (SADs) grown by molecular beam epitaxy on ZnTe were investigated and the activation energy of the thermal quenching of SADs-related photoluminescence (PL) emission was found to be equal to 47 meV.
Journal ArticleDOI
Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides
Stacia Keller,Haoran Li,Matthew A. Laurent,Yan-Ling Hu,Nathan Pfaff,Jing Lu,David F. Brown,Nicholas Fichtenbaum,James S. Speck,Steven P. DenBaars,Umesh K. Mishra +10 more
TL;DR: In this article, the progress in metal-organic chemical vapor deposition of high quality N-polar (Al, Ga, In)N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key process components such as utilization of vicinal substrates, conditions ensuring a high surface mobility of species participating in the growth process, and low impurity incorporation.