Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature
Daniel J. R. Appleby,Nikhil K. Ponon,K.S.K. Kwa,Bin Zou,Peter K. Petrov,Tianle Wang,Neil McN. Alford,Anthony O'Neill +7 more
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TLDR
Experimental evidence of effective negative capacitance is presented here at room temperature in engineered devices, where it is stabilized by the presence of a paraelectric material, enabling low power operation and reduced self-heating.Abstract:
Effective negative capacitance has been postulated in ferroelectrics because there is a hysteresis in plots of polarization-electric field. Compelling experimental evidence of effective negative capacitance is presented here at room temperature in engineered devices, where it is stabilized by the presence of a paraelectric material. In future integrated circuits, the incorporation of such negative capacitance into MOSFET gate stacks would reduce the subthreshold slope, enabling low power operation and reduced self-heating.read more
Citations
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Journal ArticleDOI
Negative capacitance in a ferroelectric capacitor.
Asif Islam Khan,Korok Chatterjee,Brian Wang,Steven Drapcho,Long You,Claudy Serrao,Saidur Rahman Bakaul,Ramamoorthy Ramesh,Sayeef Salahuddin +8 more
TL;DR: In this paper, negative capacitance in a thin epitaxial ferroelectric film was observed to decrease with time, in exactly the opposite direction to which voltage for a regular capacitor should change.
Journal ArticleDOI
Thin-film ferroelectric materials and their applications
TL;DR: In this article, the authors focus on thin-film ferroelectric materials and, in particular, on the possibility of controlling their properties through the application of strain engineering in conventional and unconventional ways, and discuss several exciting possibilities for the development of new devices, including those in electronic, thermal, photovoltaic applications, and transduction sensors and actuators.
Journal Article
Negative Capacitance in a Ferroelectric Capacitor
Asif Islam Khan,Korok Chatterjee,Brian Wang,Steven Drapcho,Long You,Claudy Serrao,Saidur Rahman Bakaul,Ramamoorthy Ramesh,Sayeef Salahuddin +8 more
TL;DR: In this paper, negative capacitance in a thin epitaxial ferroelectric film was observed to decrease with time, in exactly the opposite direction to which voltage for a regular capacitor should change.
Journal ArticleDOI
A comprehensive review on emerging artificial neuromorphic devices
TL;DR: A comprehensive review on emerging artificial neuromorphic devices and their applications is offered, showing that anion/cation migration-based memristive devices, phase change, and spintronic synapses have been quite mature and possess excellent stability as a memory device, yet they still suffer from challenges in weight updating linearity and symmetry.
Journal ArticleDOI
Negative capacitance in multidomain ferroelectric superlattices
Pavlo Zubko,Jacek C. Wojdeł,Marios Hadjimichael,Stephanie Fernandez-Pena,Anaïs Sené,Igor A. Luk'yanchuk,Jean-Marc Triscone,Jorge Íñiguez +7 more
TL;DR: First-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation.
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Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
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