Negative capacitance in a ferroelectric capacitor.
Asif Islam Khan,Korok Chatterjee,Brian Wang,Steven Drapcho,Long You,Claudy Serrao,Saidur Rahman Bakaul,Ramamoorthy Ramesh,Sayeef Salahuddin +8 more
TLDR
In this paper, negative capacitance in a thin epitaxial ferroelectric film was observed to decrease with time, in exactly the opposite direction to which voltage for a regular capacitor should change.Abstract:
The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.read more
Citations
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Thin-film ferroelectric materials and their applications
TL;DR: In this article, the authors focus on thin-film ferroelectric materials and, in particular, on the possibility of controlling their properties through the application of strain engineering in conventional and unconventional ways, and discuss several exciting possibilities for the development of new devices, including those in electronic, thermal, photovoltaic applications, and transduction sensors and actuators.
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Steep-slope hysteresis-free negative capacitance MoS 2 transistors
Mengwei Si,Chun-Jung Su,Chunsheng Jiang,Chunsheng Jiang,Nathan J. Conrad,Hong Zhou,Kerry Maize,Gang Qiu,Chien-Ting Wu,Ali Shakouri,Muhammad A. Alam,Peide D. Ye +11 more
TL;DR: In this article, a two-dimensional steep-slope MOSFET with a ferroelectric hafnium zirconium oxide layer in the gate dielectric stack is presented.
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MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
Amirhasan Nourbakhsh,Ahmad Zubair,Redwan N. Sajjad,K G Amir Tavakkoli,Wei Chen,Shiang Fang,Xi Ling,Jing Kong,Mildred S. Dresselhaus,Efthimios Kaxiras,Karl K. Berggren,Dimitri A. Antoniadis,Tomas Palacios +12 more
TL;DR: The experimental results presented in this work, combined with device transport modeling, reveal the remarkable potential of 2D MoS2 for future sub-10 nm technology nodes.
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A comprehensive review on emerging artificial neuromorphic devices
TL;DR: A comprehensive review on emerging artificial neuromorphic devices and their applications is offered, showing that anion/cation migration-based memristive devices, phase change, and spintronic synapses have been quite mature and possess excellent stability as a memory device, yet they still suffer from challenges in weight updating linearity and symmetry.
Journal ArticleDOI
Negative capacitance in multidomain ferroelectric superlattices
Pavlo Zubko,Jacek C. Wojdeł,Marios Hadjimichael,Stephanie Fernandez-Pena,Anaïs Sené,Igor A. Luk'yanchuk,Jean-Marc Triscone,Jorge Íñiguez +7 more
TL;DR: First-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation.
References
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Book
Principles and Applications of Ferroelectrics and Related Materials
TL;DR: In this paper, the theory of ferroelectricity in terms of soft modes and lattice dynamics is developed and modern techniques of measurement, including X-ray, optic, and neutron scattering, infra-red absorption, and magnetic resonance.
Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
TL;DR: Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.
Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Switching Time in Ferroelectric BaTiO3 and Its Dependence on Crystal Thickness
TL;DR: In this article, it was shown that the activation field α for the nucleation of new domains is inversely proportional to the thickness of the sample and that the maximum velocity of the domain growth was found to be of the order of the velocity of sound.
Journal ArticleDOI
Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
Asif Islam Khan,Debanjan Bhowmik,Pu Yu,Sung Joo Kim,Xiaoqing Pan,Ramamoorthy Ramesh,Sayeef Salahuddin +6 more
TL;DR: In this article, a proof-of-concept demonstration of negative capacitance effect in a nanoscale ferroelectric-dielectric heterostructure was presented. But the authors did not consider the effect of temperature on the performance of a bilayer of Pb(Zr0.2Ti0.8)O3 and dielectric SrTiO3.
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