Journal ArticleDOI
Fabrication and characterization of NiO/ZnO p–n junctions by pulsed laser deposition
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TLDR
In this article, the junction parameters such as ideality factor, barrier height, and series resistance are determined using conventional forward bias I-V characteristics, the Cheung method, and Norde's function.Abstract:
Transparent and conducting ZnO and NiO films were used for fabrication of p–n junction by pulsed laser deposition. These films were characterized by X-ray diffraction (XRD), atomic force microscopy, UV–visible spectroscopy, and electrical techniques. XRD shows that ZnO films are highly orientated along the (0 0 2) direction, while NiO films have preferred orientation along the (1 1 1) direction. These films are very smooth with surface roughness of ∼1.2 nm. The optical transmittances of ZnO and NiO films are 87% and 64%, respectively. I–V characteristics of the ZnO–NiO junction show rectification. The junction parameters such as ideality factor, barrier height, and series resistance are determined using conventional forward bias I–V characteristics, the Cheung method, and Norde's function. There is a good agreement between the diode parameters obtained from these methods. The ideality factor of ∼4.1 and barrier height of ∼0.33 eV are estimated using current–voltage characteristics.read more
Citations
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Journal ArticleDOI
Electrospun Nanofibers of p-Type NiO/n-Type ZnO Heterojunctions with Enhanced Photocatalytic Activity
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P-type transparent conducting oxides.
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Photoconductive Schottky diode based on Al/p-Si/SnS2/Ag for optical sensor applications
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Fabrication of nanostructured flowerlike p-BiOI/p-NiO heterostructure and its efficient photocatalytic performance in water treatment under visible-light irradiation
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TL;DR: In this paper, the photocatalytic properties of the as-prepared products were measured with the degradation of acid orange 7 (AO7) at room temperature under visible light illumination.
References
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Journal ArticleDOI
Extraction of Schottky diode parameters from forward current-voltage characteristics
S. K. Cheung,N. W. Cheung +1 more
TL;DR: In this article, the forward current densityvoltage (J•V) characteristics of a Schottky diode were used to determine the ideality factor n, the barrier height φB, and the series resistance R of the diode with one single I•V measurement.
Journal ArticleDOI
A modified forward I‐V plot for Schottky diodes with high series resistance
TL;DR: In this article, it was shown that a reliable value of the barrier height can be obtained even if there is a series resistance which would hamper the evaluation of the standard lnI•vs•V plot.
Journal ArticleDOI
Transparent conducting p-type NiO thin films prepared by magnetron sputtering
TL;DR: In this article, a semitransparent thin film pin diode consisting of p-type nickel oxide (NiO) semiconductors was fabricated on a glass substrate and an average transmittance above 20% in the visible range was achieved.
Journal ArticleDOI
Electrical and Optical Properties of Narrow-Band Materials
David Adler,Julius Feinleib +1 more
TL;DR: In this paper, a model for determining the density of states of pure stoichiometric NiO is proposed, taking into account the free-ion energy levels, and taking the Madelung potential, screening and covalency effects, crystalline-field stabilizations, and overlap effects.
Journal ArticleDOI
Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes
TL;DR: In this paper, it was shown that moderately doped unipolar heterojunctions as well as metal-semiconductor junctions, in particular the metal contact to p-type GaN, can increase the ideality factor to values greater than 2.
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