Journal ArticleDOI
Fabrication and performance of GaAs MESFETs with graded channel doping using focused ion-beam implantation
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TLDR
In this paper, focused ion-beam implantation was used to tailor the dopant concentration in the channel region of GaAs MESFETs, allowing the fabrication of devices with higher power ratings than uniformly doped devices of similar dimensions.Abstract:
The dopant concentration in the channel region of GaAs MESFETs is tailored by focused ion-beam implantation, allowing the fabrication of devices with higher power ratings than uniformly doped devices of similar dimensions With this technique, multiple masking steps during fabrication and avoided, and dopant concentration can be changed with great precision in both position and magnitude The effect of dopant grading on other device parameters, such as the transconductance and the pinch-off voltage, is reported >read more
Citations
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Proceedings ArticleDOI
Dual material gate field effect transistor (DMGFET)
Wei Long,Ken K. Chin +1 more
TL;DR: The dual material gate field effect transistor (DMGFET) as discussed by the authors is a new type of device, which consists of two laterally contacting materials with different work functions, and it takes advantage of material work function difference in such a way that the threshold voltage near the source is more positive than that near the drain, resulting a more rapid acceleration of charge carriers in the channel and a screening effect to suppress short channel effects.
Journal ArticleDOI
Mobility overestimation due to minority carrier injection and trapping in organic field-effect transistors
TL;DR: In this article, the authors investigate the mechanism of nonideal electrical characteristics by device simulation based on a split-channel model, where the gate voltage swing on the drain side is higher than that on the source side.
Patent
High performance MESFET with multiple quantum wells
TL;DR: In this paper, a superheterojunction field effect transistor (FET) with a multi-region channel on a Silicon (Si) substrate is presented, where the superlattice structure increases electron mobility and transit velocity.
Nanostructure fabrication
TL;DR: In this article, a range of focused ion beam techniques and processing methods designed specifically for nanofabrication are discussed and the types of structures used to investigate the physics, the physical phenomena explored with them are considered.
Journal ArticleDOI
Floating gates for avalanche suppression in MESFET's
TL;DR: In this paper, a metal-semiconductor field-effect transistor (MESFET) structure is proposed, which employs one or more uncontacted gate elements between the normal gate and the drain which float in potential in a manner similar to guard rings.
References
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Journal ArticleDOI
Power-limiting breakdown effects in GaAs MESFET's
TL;DR: In this paper, a model of the depletion layer configuration of planar and recessed-gate FETs was proposed to solve the problem of reverse breakdown at the drain-side edge of the gate, where the breakdown voltage was inversely proportional to the product of the doping level and active layer thickness.
Journal ArticleDOI
Finite-element simulation of GaAs MESFET's with lateral doping profiles and submicron gates
TL;DR: In this article, a two-dimensional finite-element simulation of a GaAs MESFET is presented to determine the drain current and transconductance as well as the two dimensional voltage, electron density, and electric-field distributions.
Journal ArticleDOI
FET fabrication using maskless ion implantation
TL;DR: In this article, focused ion beams from Au-Si, Au-Be, and B-Pt liquid-metal-alloy ion sources have been used to implant GaAs and Si.
Journal ArticleDOI
Electron beam system for rapid isothermal annealing of semiconductor materials and devices
TL;DR: In this article, an isothermal processing system using a 2kW electron beam is described, which can process areas up to 4×4 in by rapidly scanning the beam in the multiple scan mode.
Journal ArticleDOI
Maskless ion implantation technology for III–V compound semiconductors
Eizo Miyauchi,Hisao Hashimoto +1 more
TL;DR: In this paper, the authors describe a maskless ion implantation technology for III-V compound semiconductors using a 100 kV focused ion beam system that has an Au-Si-Be liquid metal ion source.