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Journal ArticleDOI

Fabrication and temperature coefficient compensation technology of low cost high temperature pressure sensor

Wang Quan, +2 more
- 17 May 2005 - 
- Vol. 120, Iss: 2, pp 468-473
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TLDR
In this article, a strain gauge chip of piezoresistive pressure sensor is designed based on separation by implanted oxygen (SIMOX) SOI technology, and then fabricated in the micro-machining work bay.
Abstract
For the purposes of pressure measurement at high temperature in oil drilling industry as well as in other industrial measurement and control systems, the strain gauge chip of piezoresistive pressure sensor is designed based on separation by implanted oxygen (SIMOX) SOI (silicon on insulator) technology, and then fabricated in the micro-machining work bay. Some kinds of sensor mechanical structures are designed for different customers and conditions. The thermal coefficients of expansion (TCE) mismatches between different materials within the high-pressure sensor system are investigated. The sensor is fabricated successfully by using high temperature packaging process. The temperature coefficient of sensitivity (TCS) and temperature coefficient of offset (TCO) compensation circuitry is demonstrated. Based on experimental data, the sensor is tested with high accuracy and good stability.

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Journal ArticleDOI

Theory, technology and applications of piezoresistive sensors: A review

TL;DR: A short, self-consistent vademecum which would be useful to researchers and engineers, since it focuses on the fundamentals of theory, materials, and readout-circuit design pertinent to the most recent developments in the field of piezoresistive sensors as mentioned in this paper.
Journal ArticleDOI

Erratum to: Design principles and considerations for the `ideal' silicon piezoresistive pressure sensor: a focused review

TL;DR: In this paper, a review and analysis of various design considerations and principles for silicon piezoresistive pressure sensors is presented, and the effect of these considerations on the sensor output taking help of various CAD tools.
Journal ArticleDOI

Polypyrrole/Silver Coaxial Nanowire Aero-Sponges for Temperature-Independent Stress Sensing and Stress-Triggered Joule Heating

TL;DR: The resultant polypyrrole/silver coaxial nanowire hybrid aero-sponges prepared via INCG technology have been processed into a piezoresistive sensor with highly sensing stability, meeting requirements for future generations of portable, compressive and flexible devices.
Journal ArticleDOI

Flexible strain sensors with high performance based on metallic glass thin film

TL;DR: In this article, a flexible strain sensor based on the Zr55Cu30Ni5Al10 metallic glass thin film which was named metallic glass skin was presented, which exhibits piezoresistance effects with a gauge factor of around 2.86, a large detectable strain range (∼1% or 180° bending angle), and good conductivity.
References
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Book

Micro Mechanical Transducers: Pressure Sensors, Accelerometers and Gyroscopes

Min-Hang Bao
TL;DR: This book discusses the basic mechanics of beam and diaphragm structures, Electrostatic driving and capacitive sensing, and piezoresistive sensing of micro mechanical transducers and their applications in capacitive pressure and accelerometers.
Journal ArticleDOI

CMOS-compatible capacitive high temperature pressure sensors

TL;DR: In this article, a surface-micromachined capacitive single chip pressure sensor for high temperature applications using separation by implantation of oxygen (SIMOX) substrates is presented.
Journal ArticleDOI

A novel high temperature pressure sensor on the basis of SOI layers

TL;DR: In this article, the principle of silicon-on-insulator (SOI) and low pressure chemical vapour deposited (LPCVD) to make the piezoresisitive pressure gauge is developed.
Journal ArticleDOI

Microsensor packaging and system partitioning

TL;DR: The possibility of using microfabrication technology for creating integrated sensors and actuators also brings with it new design problems, such as system partitioning, package design and process optimization as discussed by the authors.
Journal ArticleDOI

Thermostatic control for temperature compensation of a silicon pressure sensor

TL;DR: In this paper, an alternative temperature compensation technique for a silicon pressure sensor is presented, where the sensor is biased at a reference temperature, which is maintained with high accuracy over a specified range, thereby eliminating the dependence of the pressure sensor output on ambient temperature.
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