Cross-Sectional TEM Specimen Preparation of Semiconductor Devices by Focused Ion Beam Etching

TLDR: In this article, a procedure for preparing cross-sectional TEM specimens by focused ion beam etching (FIB) of specific regions on an integrated circuit chip is outlined, in which the preselected area of submicron scale will be located in the electron transparent section used for TEM imaging, in preparation turn-around time of about two hours.

Abstract: A procedure for preparing cross-sectional TEM specimens by focused ion beam etching (FIB) of specific regions on an integrated circuit chip is outlined. The investigation of the morphology, structure and local chemistry of precisely selected regions of semiconductor devices becomes increasingly important since the lateral dimensions and layer thickness of device structures are continually being reduced. The standard technique of preparing specimens for TEM, whether planar or cross-sectional, cannot select particular small regions. Some techniques and a number of tools and fixtures have been proposed which allow us to prepare TEM specimen of prespecified locations in complex devices. Most of these techniques, however, are still very difficult, tedious process and time consuming. p]A new technique has been proposed recently involving the use of FIB. The technique ensures that the preselected area of submicron scale will be located in the electron transparent section used for TEM imaging, in preparation turn-around time of about two hours. The TEM imaging of specific contacts via hole in a VLSI chip is illustrated.