Journal ArticleDOI
Four-Wire Bridge Measurements of Silicon van der Pauw Stress Sensors
TLDR
In this article, the transverse output of rotationally symmetric four-contact van der Pauw (VDP) stress sensors depends upon only the inplane shear stress or the difference of the in-plane normal stresses on (100) silicon.Abstract:
Under the proper orientations and excitations, the transverse output of rotationally symmetric four-contact van der Pauw (VDP) stress sensors depends upon only the in-plane shear stress or the difference of the in-plane normal stresses on (100) silicon. In bridgemode, each sensor requires only one four-wire measurement and produces an output voltage with a sensitivity that is 3.16 times that of the equivalent resistor rosettes or bridges, just as in the normal VDP sensor mode that requires two separate measurements. Both numerical and experimental results are presented to validate the conjectured behavior of the sensor. Similar results apply to sensors on (111) silicon. The output voltage results provide a simple mathematical expression for the offset voltage in Hall effect devices or the response of pseudo Hall-effect sensors. Bridge operation facilitates use of the VDP structure in embedded stress sensors in integrated circuits. [DOI: 10.1115/1.4028333]read more
Citations
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Journal ArticleDOI
Silicon Wafers with Facet‐Dependent Electrical Conductivity Properties
TL;DR: A novel field effect transistor design is possible capitalizing on the pronounced facet-dependent electrical conductivity properties of silicon by breaking intrinsic Si (100) and (111) wafers to expose sharp {111} and {112} facets.
Journal ArticleDOI
Orientation dependence of the pseudo-Hall effect in p-type 3C-SiC four-terminal devices under mechanical stress
Hoang-Phuong Phan,Afzaal Qamar,Dzung Viet Dao,Toan Khac Dinh,Li Wang,Jisheng Han,Philip Tanner,Sima Dimitrijev,Nam-Trung Nguyen +8 more
TL;DR: In this article, the orientation dependence of the pseudo-Hall effect in p-type 3C-SiC four-terminal devices under mechanical stress was investigated and the magnitude of offset voltage in arbitrary orientation under stress was estimated based on these coefficients.
Journal ArticleDOI
Van-der-Pauw measurement on devices with four contacts and two orthogonal mirror symmetries
TL;DR: In this article, a conformal mapping and equivalent resistor circuit for resistive thin film devices with four contacts of arbitrary size is discussed analytically by conformal alignment and corresponding resistor circuit.
Journal ArticleDOI
Reliability Related Research on Plastic IC Packages: A Test Chip Approach, Richard van Gestel, Delft University Press, 1994. Number of pages: 318
Journal ArticleDOI
An Analytical Theory of Piezoresistive Effects in Hall Plates with Large Contacts
TL;DR: In this article, the authors show that the Hall-geometry factor also applies to four-terminal stress transducers and that the analogy holds only for a limited class of devices.
References
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Journal ArticleDOI
Piezoresistance Effect in Germanium and Silicon
TL;DR: In this article, the complete tensor piezoresistance has been determined experimentally for these materials and expressed in terms of the pressure coefficient of resistivity and two simple shear coefficients.
Book ChapterDOI
A method of measuring specific resistivity and hall effect of discs of arbitrary shape
Journal ArticleDOI
Review: Semiconductor Piezoresistance for Microsystems
TL;DR: This paper provides a comprehensive overview of integrated piezoresistor technology with an introduction to the physics of Piezoresistivity, process and material selection and design guidance useful to researchers and device engineers.
Journal ArticleDOI
Piezoresistive Properties of Silicon Diffused Layers
Obert N. Tufte,E. L. Stelzer +1 more
TL;DR: The piezoresistive properties of n and p-type diffused layers formed by the diffusion of impurities into silicon have been investigated in this paper, and the results show a change in the symmetry and the temperature dependence of the large coefficients.