Proceedings ArticleDOI
Gain and threshold current density characteristics of 2-μm GaInAsSb/AlGaAsSb MQW lasers with increased valence band offset
TLDR
In this paper, the authors reported a room-temperature threshold current density as low as 173 A/cm 2 for a 2-micrometer GaInAsSb quantum well laser and 225 A/ cm 2 for the 4-QW laser.Abstract:
Compressively strained 2 micrometer GaInAsSb quantum well lasers with large valence band offsets and broadened waveguides display a record characteristic temperature, T 0 equals 140 degrees Kelvin for a 4-QW laser and a differential efficiency of 0.74 for a pulsed 2-QW device. The T 0 of these antimonide lasers is 65% more than that reported for phosphide-based lasers operating at 2 micrometer wavelength. A room-temperature threshold current density as low as 173 A/cm 2 has been observed for a 2-QW device and 225 A/cm 2 for the 4-QW laser.read more
Citations
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Journal ArticleDOI
The effect of increased valence band offset on the operation of 2 μm GaInAsSb-AlGaAsSb lasers
TL;DR: In this paper, two and four quantum-well (QW) GaInAsSb-AlGaSb lasers emitting at 2 /spl mu/m were reported, and it was found that higher Al content in the QW barrier improves the internal efficiency, saturated modal gain, and characteristic temperature of the lasers.
Book ChapterDOI
Mid-Infrared 2—5 μm Heterojunction Laser Diodes
TL;DR: In this paper, the authors present an overview of the state of the art of these different mid-infrared systems emitting in the 2.0-2.7 μm wavelength range.
Journal ArticleDOI
High-resolution x-ray and transmission electron microscopic analysis of a GaInAsSb/AlGaAsSb multiple quantum well laser structure
TL;DR: In this paper, high-resolution x-ray diffractometry (HRXRD) and transmission electron microscopy (TEM) are employed to characterize a quaternary IIIxIII 1−xVyV1−y AlGaAsSb/GaInAs Sb multiple quantum well (MQW) heterostructure.
References
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Journal ArticleDOI
Motion of Electrons and Holes in Perturbed Periodic Fields
J. M. Luttinger,Walter Kohn +1 more
TL;DR: In this paper, a new method of developing an "effective-mass" equation for electrons moving in a perturbed periodic structure is discussed, particularly adapted to such problems as arise in connection with impurity states and cyclotron resonance in semiconductors such as Si and Ge.
Journal ArticleDOI
Calculations of hole subbands in semiconductor quantum wells and superlattices.
TL;DR: Calculations of hole subbands in GaAs-AlGaAs quantum wells and superlattices are performed within the envelope-function approach, with full inclusion of the degeneracy and warping of the bulk valence bands described by the Luttinger Hamiltonian.
Journal ArticleDOI
Ultralow‐loss broadened‐waveguide high‐power 2 μm AlGaAsSb/InGaAsSb/GaSb separate‐confinement quantum‐well lasers
D. Z. Garbuzov,Ramon U. Martinelli,H. Lee,Pamela K. York,R. J. Menna,John C. Connolly,S. Y. Narayan +6 more
TL;DR: In this article, the waveguides of 2 μm AlGaAsSb/InGaSb separate-confinement multiquantum-well (AASB/IASB) were extended to 2 cm−1, while threshold current densities remained as low as 300 A/cm2.
Journal ArticleDOI
4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes
D. Z. Garbuzov,Ramon U. Martinelli,H. Lee,R. J. Menna,Pamela K. York,L. A. DiMarco,M. G. Harvey,R. J. Matarese,S. Y. Narayan,John C. Connolly +9 more
TL;DR: AlGaAsSb/InGaSb single-quantum-well (SQW) laser diodes emitting at 2 μm were fabricated and tested in this paper.