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Journal ArticleDOI

Graphene spin valve: An angle sensor

TLDR
In this paper, the angle dependent magnetoresistance (MR) in a spin valve for different orientations of applied magnetic field (B) has been investigated and the switching points of spin valve signals show a clear shift towards higher B for each increasing angle of the applied field, thus sensing the response for respective orientation of the magnetic field.
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This article is published in Journal of Magnetism and Magnetic Materials.The article was published on 2017-06-15. It has received 15 citations till now. The article focuses on the topics: Spin valve & Spintronics.

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Raman spectroscopy of graphene on different substrates and influence of defects

TL;DR: In this paper, the authors show the evolution of Raman spectra with number of graphene layers on different substrates, SiO$ 2/Si and conducting indium tin oxide (ITO) plate.
Journal ArticleDOI

Recent advancements in 2D-materials interface based magnetic junctions for spintronics

TL;DR: In this paper, the spin valve effect in lateral and vertical magnetic junctions incorporating 2D materials as non-magnetic layer between ferromagnetic (FM) electrodes is studied by measuring non-local resistance (RNL) and relative magnetoresistance ratio (MR), respectively.
Journal ArticleDOI

Chemical doping of transition metal dichalcogenides (TMDCs) based field effect transistors: A review

TL;DR: In this paper, the role of chemical dopants in transition metal dichalcogenides (TMDCs) has been discussed and a comprehensive summary of their role in modulating the numerous electronic transport, electronic and optical properties of TMDCs based field effect transistors is presented.
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Ultraviolet-light-driven enhanced hysteresis effect in graphene-tungsten disulfide heterostructures

TL;DR: In this paper, a large hysteresis effect was reported by constructing graphene-tungsten disulfide heterostructure (GWH), where the semiconducting WS2 acts as a channel in field effect transistor geometry while graphene works as charge trapping interfacial layer.
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Interlayer reliant magnetotransport in graphene spin valve

TL;DR: In this paper, the magnetotransport properties of vertical spin valve structures incorporating graphene (Gr), Gr/Au and Gr/Al 2 O 3 intervening layers are elucidated, and an in-plane magnetic field is obliquely applied to the device with the purpose to vary the relative magnetizations of ferromagnetic electrodes (Co and Ni).
References
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Journal ArticleDOI

Large-scale pattern growth of graphene films for stretchable transparent electrodes

TL;DR: The direct synthesis of large-scale graphene films using chemical vapour deposition on thin nickel layers is reported, and two different methods of patterning the films and transferring them to arbitrary substrates are presented, implying that the quality of graphene grown by chemical vapours is as high as mechanically cleaved graphene.
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Raman spectroscopy of graphene and graphite: Disorder, electron phonon coupling, doping and nonadiabatic effects

TL;DR: In this article, the authors focus on the origin of the D and G peaks and the second order of D peak and show that the G and 2 D Raman peaks change in shape, position and relative intensity with number of graphene layers.
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Raman spectroscopy in graphene

TL;DR: In this article, the authors discuss the first-order and double resonance Raman scattering mechanisms in graphene, which give rise to the most prominent Raman features and give special emphasis to the possibility of using Raman spectroscopy to distinguish a monolayer from few-layer graphene stacked in the Bernal configuration.
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Electronic spin transport and spin precession in single graphene layers at room temperature

TL;DR: The observation of spin transport, as well as Larmor spin precession, over micrometre-scale distances in single graphene layers is reported, indicating that spin coherence extends underneath all of the contacts.
Journal ArticleDOI

Graphene Spintronics

TL;DR: The experimental and theoretical state-of-art concerning spin injection and transport, defect-induced magnetic moments, spin-orbit coupling and spin relaxation in graphene are reviewed.
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