Journal ArticleDOI
High pressure structural phase transformation in gallium nitride
TLDR
In this paper, the total energy of both structures as well as of the zincblende structure was calculated, for different unit cell volumes, using first-principles non-local pseudopotentials.About:
This article is published in Solid State Communications.The article was published on 1992-01-01. It has received 76 citations till now. The article focuses on the topics: Wurtzite crystal structure & Lattice constant.read more
Citations
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Journal ArticleDOI
High-pressure phases of group-IV, III–V, and II–VI compounds
TL;DR: The most complete set of theoretical and experimental data obtained to date is for the group-IVA elements and the group IIIA-VA and IIB-VIA compounds.
Journal ArticleDOI
First-principles study on electronic and elastic properties of BN, AlN, and GaN
TL;DR: In this article, the first-principles total energy calculations were carried out to investigate the electronic and elastic properties of both zinc-blende and wurtzite BN, AlN, and GaN.
Journal ArticleDOI
High-pressure phases of group IV and III-V semiconductors
TL;DR: The currently known structures and properties of group?IV elements and III-V compounds at high pressure are reviewed in this article, and the relative equilibrium stability of these phases, as determined by theoretical methods, is also discussed.
Journal ArticleDOI
Pressure‐induced rocksalt phase of aluminum nitride: A metastable structure at ambient condition
Qing Xia,Hui Xia,Arthur L. Ruoff +2 more
TL;DR: In this paper, a pressure-induced first-order phase transition from a wurtzite structure to a rocksalt structure was observed on the III-V compound aluminum nitride to 65 GPa using a synchrotron x-ray source.
Journal ArticleDOI
Equation of state of the rocksalt phase of III V nitrides to 72 GPa or higher
Shinji Uehara,Taketoshi Masamoto,Akifumi Onodera,Masaki Ueno,Osamu Shimomura,Kenichi Takemura +5 more
TL;DR: In this article, high pressure diffraction studies were carried out at high pressure on AlN, GaN and InN in a diamond-anvil cell using synchrotron radiation and an imaging plate detector.
References
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Journal ArticleDOI
Fundamental energy gap of GaN from photoluminescence excitation spectra
TL;DR: In this article, the results of PLE measurements are combined with data on reflection and luminescence in the intrinsic region to determine the positions of $A, $B, and $C$-exciton ground-state transition energies and the lowest band gap.
Journal ArticleDOI
Crystal structure refinement of AlN and GaN
Heinz Schulz,K. H. Thiemann +1 more
TL;DR: In this article, the structure parameters of AlN and GaN using X-ray intensities from single crystals collected with an automatic single crystal diffractometer were refined using a single crystal detector.
Journal ArticleDOI
Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy
TL;DR: In this paper, the growth of cubic phase single-crystal thin-film GaN using a modified molecular-beam epitaxy technique was reported, but to activate nitrogen gas prior to deposition, a microwave glow discharge was used.
Journal ArticleDOI
Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine
TL;DR: In this article, the growth and characterization of AlN and GaN on GaAs were presented. But the direction of GaN growth on (100) GaAs is slightly tilted from that of the substrate, and it is speculated that this tilt results from the very large lattice-mismatch existing between GaN and GAs.
Journal ArticleDOI
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
Robert F. Davis,Zlatko Sitar,B.E. Williams,H. S. Kong,H. J. Kim,John W. Palmour,John A. Edmond,J. Ryu,Jeffrey T. Glass,C. H. Carter +9 more
TL;DR: In this paper, it was shown that monocrystalline diamond and silicon carbide can be achieved at or below 1 atm total pressure and at a temperature T, which is the highest operating temperature ever achieved for a field effect device.
Related Papers (5)
Optical and structural properties of III-V nitrides under pressure
N. E. Christensen,I. Gorczyca +1 more