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Highly Compact Isolated Gate Driver With Ultrafast Overcurrent Protection for 10 kV SiC MOSFETs

Daniel Rothmund, +2 more
- Vol. 3, Iss: 4, pp 278-291
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The article was published on 2018-12-01 and is currently open access. It has received 84 citations till now. The article focuses on the topics: Overcurrent & Gate driver.

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Journal ArticleDOI

99% Efficient 10 kV SiC-Based 7 kV/400 V DC Transformer for Future Data Centers

TL;DR: In this article, an isolated 25 kW, 48 kHz, 7 kV to 400 V series resonant dc/dc converter based on 10 kV SiC MOSFETs is realized and tested.
Journal ArticleDOI

99.1% Efficient 10 kV SiC-Based Medium-Voltage ZVS Bidirectional Single-Phase PFC AC/DC Stage

TL;DR: In this paper, the authors designed and implemented a 25 kW, 3.8 kV single-phase AC to 7 kV DC PFC rectifier unit based on the 10 kV SiC MOSFETs.
Journal ArticleDOI

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

TL;DR: This article presents several potential solutions to tackle the application challenges and to fully exploit the superior characteristics of SiC devices and converters while attenuating their negative side effects.
Journal ArticleDOI

High-Scalability Enhanced Gate Drivers for SiC MOSFET Modules With Transient Immunity Beyond 100 V/ns

TL;DR: A systematic enhanced GD (eGD) solution that incorporates three scalable features compatible with almost all the SiC mosfet modules is presented, and two noise-free isolation architectures are proposed to mitigate common-mode noise-admittance by more than 100 dB.
Journal ArticleDOI

High-Density Current-Transformer-Based Gate-Drive Power Supply With Reinforced Isolation for 10-kV SiC MOSFET Modules

TL;DR: In this article, a GaN-based inductor-capacitor-induction-pinector (LCCL)-LC resonant converter switching at 1 MHz was used to produce a resonant current source and to supply multiple isolated loads (gate-drivers) through the single-turn primary winding loop.
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