Journal ArticleDOI
Highly sensitive and cost-effective metal-semiconductor-metal asymmetric type Schottky metallization based ultraviolet photodetecting sensors fabricated on n-type GaN
TLDR
In this article , a metal-semiconductor-metal (MSM) Schottky barrier ultraviolet photodetector has been fabricated at room temperature, which is used to measure surface morphological and oxidation states of Cr and Ni layers using atomic force microscopy and X-ray absorption spectroscopy, respectively.About:
This article is published in Materials Science in Semiconductor Processing.The article was published on 2022-02-01. It has received 7 citations till now. The article focuses on the topics: Schottky barrier & Ultraviolet.read more
Citations
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Journal ArticleDOI
Electrical properties of Si/diamond heterojunction diodes fabricated by using surface activated bonding
Yota Uehigashi,Shinya Ohmagari,Hitoshi Umezawa,Hideaki Yamada,Jianbo Liang,Naoteru Shigekawa +5 more
TL;DR: In this article , the authors evaluated the currentvoltage and temperature-dependent I-V characteristics of n + -Si/p-diamond heterojunction diodes (HDs) fabricated by using surface activated bonding.
Journal ArticleDOI
Examination on the current conduction mechanisms of Au/n-Si diodes with ZnO–PVP and ZnO/Ag2WO4 –PVP interfacial layers
Journal ArticleDOI
Lateral P–N Junction Photodiodes Using Lateral Polarity Structure GaN Films: A Theoretical Perspective
Proceedings ArticleDOI
A Photodetector-based Automated Light Intensity Controlling System using IoT
TL;DR: In this paper , a photo detector is tested in presence of room light, flash light and laser (wavelength between 630-670 nm) and sensitivity is found to be 66.66, 84% and 126% respectively.
Journal ArticleDOI
Broad spectral response to photon energy unlimited by Schottky barrier from NiSi/Si junction
TL;DR: In this article , a NiSi thin-film Schottky photodetector with photoresponses was investigated, and the authors obtained a 4.85 μA sheer photothermal response to a 0.475 mW 4-μm signal with 10.21 mA/W responsivity.
References
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Journal ArticleDOI
Extraction of Schottky diode parameters from forward current-voltage characteristics
S. K. Cheung,N. W. Cheung +1 more
TL;DR: In this article, the forward current densityvoltage (J•V) characteristics of a Schottky diode were used to determine the ideality factor n, the barrier height φB, and the series resistance R of the diode with one single I•V measurement.
Journal ArticleDOI
Semiconductor ultraviolet detectors
TL;DR: In this paper, a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described and the current state of the art of different types of semiconductor UV detectors is presented.
Journal ArticleDOI
A modified forward I‐V plot for Schottky diodes with high series resistance
TL;DR: In this article, it was shown that a reliable value of the barrier height can be obtained even if there is a series resistance which would hamper the evaluation of the standard lnI•vs•V plot.
Journal ArticleDOI
Photoconductive characteristics of single-crystal CdS nanoribbons.
TL;DR: CdS nanoribbon has the response speed substantively faster than those ever reported for conventional film and bulk CdS materials and the size ofnanoribbons has a significant influence on the responsespeed with smaller Cd S nanorIBbons showing higher response speed.
Journal ArticleDOI
Graphene-β-Ga2O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application
TL;DR: Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility.