Journal ArticleDOI
Huge Spin-Polarization of L21-Ordered Co2MnSi Epitaxial Heusler Alloy Film
Yuya Sakuraba,J. Nakata,Mikihiko Oogane,Hitoshi Kubota,Yasuo Ando,Akimasa Sakuma,Terunobu Miyazaki +6 more
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TLDR
Magnetic tunnel junctions with a stacking structure of epitaxial Co2MnSi/Al-O barrier/poly-crystalline Co75Fe25 were fabricated using an ultrahigh vacuum sputtering system as mentioned in this paper.Abstract:
Magnetic tunnel junctions (MTJs) with a stacking structure of epitaxial Co2MnSi/Al–O barrier/poly-crystalline Co75Fe25 were fabricated using an ultrahigh vacuum sputtering system. The epitaxial Co2MnSi bottom electrode exhibited highly ordered L21 structure and very smooth surface morphology. Observed magnetoresistance (MR) ratios of 70% at room temperature (RT) and 159% at 2 K are the highest values to date for MTJs using a Heusler alloy electrode. A high spin-polarization of 0.89 at 2 K for Co2MnSi obtained from Julliere's model coincided with the half-metallic band structure that was predicted by theoretical calculations.read more
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Spintronics: a challenge for materials science and solid-state chemistry.
TL;DR: In this Review, the most important developments in the field of spintronics are described from the point of view of materials science.
Journal ArticleDOI
Giant tunneling magnetoresistance in Co2MnSi∕Al–O∕Co2MnSi magnetic tunnel junctions
Yuya Sakuraba,M. Hattori,Mikihiko Oogane,Yasuo Ando,Hiroaki Kato,Akimasa Sakuma,Terunobu Miyazaki,Hitoshi Kubota +7 more
TL;DR: In this paper, magnetic tunnel junctions (MTJ) with a stacking structure of Co2MnSi∕Al-O∕Co2mnSi were fabricated using magnetron sputtering system and exhibited an extremely large tunneling magnetoresistance (TMR) ratio of 570% at low temperature.
Journal Article
Giant tunneling magnetoresistance in Co_2MnSi/Al-O/Co_2MnSi magnetic tunnel junctions
Journal ArticleDOI
Future perspectives for spintronic devices
TL;DR: Spintronics is one of the emerging research fields in nanotechnology and has been growing very rapidly as mentioned in this paper, which has led to the discovery of giant magnetoresistance in 1988, which utilized spin-polarized electron transport across a non-magnetic metallic layer.
Journal ArticleDOI
Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2FeAl0.5Si0.5 electrodes fabricated by molecular beam epitaxy
TL;DR: In this paper, a magnetic tunnel junction of Co2FeAl0.5Si 0.5 electrodes and a MgO barrier fabricated by molecular beam epitaxy was developed, which had a tunnel magnetoresistance ratio of 386% at approximately 300 K and 832% at 9 K.
References
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Journal ArticleDOI
Interface structure and magnetism of magnetic tunnel junctions with a Co2MnSi electrode
TL;DR: In this article, the structural and magnetic properties of tunnel junctions with a magnetically soft Heusler-alloy electrode (Co2MnSi/Al+oxidation+in situ annealing/Co7Fe3/Mn83Ir17) were investigated with respect to their structural and magnetoresistance properties at the lower barrier interface by electron and x-ray absorption spectroscopy.
Journal ArticleDOI
Atomic disorder in Heusler Co2MnGe measured by anomalous x-ray diffraction
Bruce Ravel,Julie O. Cross,Mark P. Raphael,Vincent G. Harris,Ramamoorthy Ramesh,Laxmikant V. Saraf +5 more
TL;DR: In this article, an anomalous x-ray diffraction measurement on Co2MnGe was performed to determine antisite disorder in thin films with a high precision, and structural defects involving site swapping between the Co and Mn sublattices have been proposed as a mechanism to diminish spin polarization.
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Large Magnetoresistance in Magnetic Tunnel Junctions Using Co-Mn-Al Full Heusler Alloy
TL;DR: Magnetic tunnel junctions with a stacking structure of Cr/Co-Mn-Al/Al-O/CoFe/Ir-mn were fabricated using a UHV magnetron-sputtering machine as mentioned in this paper.