Journal ArticleDOI
Improved electrical properties on the anodic oxide/InP interface for MOS structures
TLDR
In this article, the interface properties of the anodic oxide/n-type (111) InP metal oxide semiconductor (MOS) structures significantly improved while using the polishing agent HBr:K2Cr2O7:H2O (BCA).Abstract:
The interface properties of the anodic oxide/n-type (111) InP metal oxide semiconductor (MOS) structures significantly improved while using the polishing agent HBr:K2Cr2O7:H2O (BCA). Annealing at 250°C dehydrates the grown oxides and has a strong effect on the surface potential. Composition of the oxides analyzed using x-ray photoelectron spectroscopy showed that the oxides are composed of In2O3, InPO3, and InPO4. MOS structures fabricated on BCA polished substrates show a lower surface state density of 6 × 1010 cm−2 eV−1 when compared to the substrates polished with bromine-methanol (8 × 1010 cm−2 eV−1).read more
Citations
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Journal ArticleDOI
InP and Si metal-oxide semiconductor structures fabricated using oxygen plasma assisted wafer bonding
TL;DR: In this article, thermally grown SiO2 was transferred to InP from oxidized Si wafers using oxygen plasma assisted wafer bonding followed by annealing at either 125°C or at 400°C.
Journal ArticleDOI
Investigations on the CdS passivated anodic oxide–InP interface for MOS structures
TL;DR: In this article, thin layers of cadmium sulfide have been deposited on ǫ n-InP using the chemical bath deposition technique at room temperature, and X-ray photoelectron spectroscopy (XPS) results show that sulfur in CdS removes native oxide present on the InP surface and forms a chemically stable surface.
Journal ArticleDOI
BaTiO3 as an insulating layer for InP-based metal-insulator–semiconductor structures
TL;DR: In this article, the surface state density (N SS ) values were calculated from the C-voltage measurements using Terman's analysis and the minimum N SS value calculated is 7×10 10 cm −2 eV −1.
Journal ArticleDOI
Deep Level Transient Spectroscopic Analysis on Au/SiO2/InP MOS Structures
TL;DR: In this article, the effect of substrate temperature during SiO 2 deposition has been analyzed using DLTS, and the detected traps have been analysed under different reverse bias values to distinguish between the bulk and interface traps.
Proceedings ArticleDOI
Post-breakdown conduction in metal gate/MgO/InP structures
Enrique Miranda,Eamon O'Connor,G. Hughes,Pat G. Casey,Karim Cherkaoui,Scott Monaghan,R. Long,D. O'Connell,Paul K. Hurley +8 more
TL;DR: In this paper, the authors investigated the electrical behavior of broken down thin films of magnesium oxide (MgO) grown on indium phosphide (InP) substrates and showed that the leakage current associated with this failure mode follows the power-law model I=aVb for both injection polarities in a voltage range that largely exceeds the one reported for SiO2.
References
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Journal ArticleDOI
An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
TL;DR: In this article, the M-O-S diode was introduced, and a theory for its operation in the absence of surface states was obtained, and it was shown that surface states with non-zero relaxation times may increase the capacitance of the device, as well as affect the proportion of applied voltage which appears across the silicon.
Journal ArticleDOI
Sulfur as a surface passivation for InP
R. Iyer,R. R. Chang,D. L. Lile +2 more
TL;DR: In this article, the use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near-ideal passivated surface prior to chemical vapor deposition of SiO2 was investigated.
Journal ArticleDOI
An investigation by electron spectroscopy for chemical analysis of chemical treatments of the (100) surface of n-type InP epitaxial layers for Langmuir film deposition
TL;DR: The surface chemistry of InP substrates used for the fabrication of electronic devices (MIS structures) was examined by ESCA as discussed by the authors, where the effectiveness of several types of etchants and the features produced on the substrate surface were evaluated and discussed.
Journal ArticleDOI
Composition and thermal stability of thin native oxides on InP
TL;DR: In this article, the chemical composition of surface films formed on air exposed bromine/methanol etched InP were investigated in both the "as etched" condition and after in situ heat treatment.
Journal ArticleDOI
Thin anodic oxides formed on GaAs in aqueous solutions
TL;DR: In this article, thin anodic oxides were formed on p−GaAs (100) in aqueous solutions (borate buffer, pH 8.4 and 0.3 M NH4H2PO4, pH 4.4).