Journal ArticleDOI
In situ fabricated ga2o3-gaas structures with low interface recombination velocity
M. Passlack,Minghwei Hong,Erdmann Frederick Schubert,J. Kwo,Joseph Petrus Mannaerts,S. N. G. Chu,N. Moriya,F. A. Thiel +7 more
TLDR
Amorphous Ga2O3 films have been deposited in situ on (100) GaAs layers grown by molecular beam epitaxy in ultrahigh vacuum as discussed by the authors, and the photoluminescence (PL) intensity, measured at 514.5 nm excitation wavelength, is enhanced drastically by a factor of 420 as compared to a corresponding bare GaAs surface.Abstract:
Amorphous Ga2O3 films have been deposited in situ on (100) GaAs layers grown by molecular beam epitaxy in ultrahigh vacuum. The Ga2O3–GaAs interface is stable during photoexcitation and the photoluminescence (PL) intensity, measured at 514.5 nm excitation wavelength, is enhanced drastically by a factor of 420 as compared to a corresponding bare GaAs surface. The Ga2O3–GaAs interface recombination velocity derived from a modified dead layer model is below 104 cm/s. Furthermore, the PL intensity of Ga2O3–GaAs structures approaches that of a very low interface state density (2×109 eV−1 cm−2) AlGaAs–GaAs reference structure.read more
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Journal ArticleDOI
Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling
M. Passlack,Minghwei Hong,Joseph Petrus Mannaerts,Robert L. Opila,S. N. G. Chu,N. Moriya,Fan Ren,J. Kwo +7 more
TL;DR: In this article, both in situ and ex situ Ga/sub 2/O/sub 3/ deposition schemes utilizing molecular beams of gallium oxide have been investigated, and the existence of strong inversion in both n- and p-type GaAs has been clearly established.
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Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4)
TL;DR: The surface structures formed upon deposition of O2 and Ga2O onto the technologically important arsenic-rich GaAs(001)-c (2×8)/(2×4) surface have been studied using scanning tunneling microscopy and spectroscopy, and the results are compared to density functional theory calculations as discussed by the authors.
Journal ArticleDOI
High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure
TL;DR: In this paper, a high-dielectric-constant Ta2O5 has been grown on the n-GaN epifilm by rf magnetron sputtering Photoluminescence measurement has been performed to compare the luminescence intensity with and without the dielectrics, and a surface recombination velocity is estimated to be 3×104 cm/s as an upper limit using a modified dead-layer model.
Journal ArticleDOI
Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy
TL;DR: In this article, the influence of the deposition parameters (e.g. pulse duration, growth and source temperatures) on film growth were studied and by a proper choice of the parameters a self-controlled growth was demonstrated around 370°C.
Journal ArticleDOI
First-principles study of GaAs(001)-β2(2×4) surface oxidation and passivation with H, Cl, S, F, and GaO
TL;DR: In this paper, the interactions of oxygen atoms on the GaAs(001)-β2(2×4) surface and the passivation of oxidized GaAs (1)-β 2(2x4)-surface were studied by density functional theory, and the results showed that H, Cl, F, and GaO can remove such gap states.