Journal ArticleDOI
Inductively Coupled Plasma Etching of III‐V Nitrides in CH 4 / H 2 / Ar and CH 4 / H 2 / N 2 Chemistries
Catherine Vartuli,Stephen J. Pearton,J. W. Lee,J. D. MacKenzie,C. R. Abernathy,Randy J. Shul,C. Constantine,C. Barratt +7 more
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TLDR
In this article, inductively coupled plasma (ICP) etching of GaN, AlN, InN, N, InGaN, and InAlN was investigated in CH{sub 4/H{sub 2}/Ar and Ch{sub 3/N{sub 1/N} plasmas as a function of dc bias and ICP power.Abstract:
Inductively coupled plasma (ICP) etching of GaN, AlN, InN, InGaN, and InAlN was investigated in CH{sub 4}/H{sub 2}/Ar and Ch{sub 4}/H{sub 2}/N{sub 2} plasmas as a function of dc bias, ICP power, and pressure. The etch rates were generally quite low, as is common for III-nitrides in CH{sub 4}-based chemistries. In CH{sub 4}/H{sub 2}/Ar plasmas, the etch rates increased with increasing dc bias. At low radio frequency power (150 W), the etch rates increased with increasing ICP power, while at 350 W radio frequency power, a peak was found between 500 and 750 W ICP power. The dc bias was found to increase with increasing pressure. The etch rates in the CH{sub 4}/H{sub 2}/N{sub 2} chemistry were significantly lower, with a peak at 500 W ICP power. The etched surfaces were smooth, while selectivities of etch were {le} 6 for InN over GaN, AlN, InGaN, and InAlN under all conditions.read more
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Journal ArticleDOI
Gan : processing, defects, and devices
TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Journal ArticleDOI
Dry Etching of ZnO Using an Inductively Coupled Plasma
TL;DR: In this paper, the dry etching characteristics of ZnO using an inductively couple plasma (ICP) have been investigated, for the first time, as functions of plasma chemistry, radio frequency (rf) table power, and ICP power.
Journal ArticleDOI
Inductively coupled plasma reactive ion etching of ZnO using BCl 3 -based plasmas
Han Ki Kim,Han Ki Kim,J. W. Bae,Tae-Kyung Kim,Kyoung-Kook Kim,Tae Yeon Seong,Ilesanmi Adesida +6 more
TL;DR: In this paper, the etch rate of ZnO is investigated by means of inductively coupled plasma (ICP) reactive ion etching in BCl3-based plasmas.
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Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry
TL;DR: In this article, the surface morphology of the etched GaN under different plasma conditions is analyzed by atomic force microscopy and X-ray photoelectron spectroscopy is used to correlate the chemical changes induced by plasma etching of the GaN surface.