Journal ArticleDOI
Influence of deposition temperature on structure and morphology of nanostructured SnO2 films synthesized by pulsed laser deposition
TLDR
In this article, nanostructured tin oxide thin films were deposited on the Si (100) substrate using the pulsed laser deposition technique at different substrate temperatures (300, 450 and 600 Ã 0 ) in an oxygen atmosphere.About:
This article is published in Materials Letters.The article was published on 2011-01-31. It has received 45 citations till now. The article focuses on the topics: Pulsed laser deposition & Carbon film.read more
Citations
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Use of silane coupling agent for surface modification of zinc oxide as inorganic filler and preparation of poly(amide-imide)/zinc oxide nanocomposite containing phenylalanine moieties
TL;DR: In this paper, a series of polyamide-imide)/ZnO nanocomposites with modified ZnO nanoparticles contents was prepared by ultrasonic irradiation.
Journal ArticleDOI
Emergent phenomena in manganites under spatial confinement
TL;DR: In this paper, the formation process of electronic phase separation (EPS) is controlled using external local fields, such as magnetic exchange field, strain field, and electric field, to obtain a complete view of the phases residing in a material and give vital information on phase formation, movement, and fluctuation.
Journal ArticleDOI
Type Inversion and Certain Physical Properties of Spray Pyrolysed SnO2:Al Films for Novel Transparent Electronics Applications
K. Ravichandran,K. Thirumurugan +1 more
TL;DR: In this paper, it was shown that 20 at% is the optimum doping level for good quality p-type SnO2:Al films suitable for transparent electronic devices and the possible mechanism behind the zig-zag variation in resistivity with respect to Al doping is discussed in detail.
Journal ArticleDOI
Fabrication of p-type SnO2 films via pulsed laser deposition method by using Sb as dopant
TL;DR: In this article, a transparent conducting antimony-doped tin oxide (ATO) thin film was successfully fabricated on quartz glass substrates by pulsed laser deposition using a 20.1-at.% Sb doped SnO2 ceramic target.
Journal ArticleDOI
Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors
TL;DR: The integration of gas sensor components into smart phones, tablets and wrist watches will revolutionize the environmental health and safety industry by providing individuals the ability to detect harmful chemicals and pollutants in the environment using always-on hand-held or wearable devices.
References
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Journal ArticleDOI
New approaches for improving semiconductor gas sensors
TL;DR: In this paper, the authors demonstrated that the sensing characteristics of a semiconductor gas sensor using SnO2 can be improved by controlling fundamental factors which affect its receptor and transducer functions.
Journal ArticleDOI
SnO2 sensors: current status and future prospects☆
TL;DR: A survey on the current status and future prospects in research and development of SnO2-based sensors is given in this paper, where the influence of contact geometry and crystallinity on the sensor response signal is outlined.
Journal ArticleDOI
Hall measurement studies and an electrical conduction model of tin oxide ultrafine particle films
TL;DR: In this article, the authors measured the Hall effect for ultrafine particle films of tin oxide (particle size 50-200 A) in contact with reducing gases and found that both the carrier concentration and mobility increased with an increasing concentration of reducing gas.
Book
Handbook of semiconductor wafer cleaning technology : science, technology, and applications
TL;DR: In this paper, all pertinent knowledge on semiconductor wafer cleaning and the scientific and technical disciplines associated directly or indirectly with this subject is brought together into one volume and discussed in detail.
Journal ArticleDOI
Microstructural, electrical, and optical properties of SnO2 nanocrystalline thin films grown on InP (100) substrates for applications as gas sensor devices
TL;DR: In this paper, the capacitance and voltage measurements at room temperature showed that the type and the carrier concentration of the nominally undoped SnO2 film were n type and approximately 1.62×1016 cm−3, respectively.