Journal ArticleDOI
Influence of source-drain series resistance on MOSFET field-effect mobility
TLDR
In this paper, a simple but general model for explaining the series resistance dependence of transconductance and field effect mobility is developed, which enables a quantitative analysis of series resistance effects on the maximum mobility and the corresponding gate voltage, has been successfully tested on short channel MOSFETs with various channel lengths and external series resistances.Abstract:
A simple but general model for explaining the series resistance dependence of transconductance and field-effect mobility is developed in the letter. This model, which enables a quantitative analysis of series resistance effects on the maximum mobility and the corresponding gate voltage, has been successfully tested on short-channel MOSFETs with various channel lengths and external series resistances.read more
Citations
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Journal ArticleDOI
Influence of series resistances and interface coupling on the transconductance of fully-depleted silicon-on-insulator MOSFETs
TL;DR: In this article, a model is proposed to describe the variation of the transaconductance in fully-depleted silicon on insulator MOSFETs as a function of the front/back gate biases, channel length and series resistances.
Journal ArticleDOI
Silicon films on sapphire
TL;DR: The physical properties of silicon on sapphire (SOS) thin films and their impact on the operation of integrated devices are systematically reviewed in this paper, with emphasis on autodoping, stress, lattice defects and interface behaviour.
Journal ArticleDOI
An analytical model of conductance and transconductance for enhanced-mode MOSFETs
TL;DR: In this paper, an analytical model of conductance and transconductance for enhanced-mode MOSFETs is presented based on an inversion charge dependent mobility, the model enables the calculation of the conductance/transonductance MOSFLET characteristics against several parameters such as bulk bias, oxide thickness, channel length, source-drain series resistance, surface states density, mobility reduction factor and/or potential fluctuation rate.
Journal ArticleDOI
Analytical modelling of the MOS transistor
TL;DR: In this article, generic analytical expressions useful for the modeling of the MOSFET operation as a function of gate and drain biases are presented, both linear and non-ohmic regimes of operation are analyzed.
Journal ArticleDOI
Low-temperature mobility behaviour in submicron MOSFETs and related determination of channel length and series resistance
TL;DR: In this article, the authors studied the electron mobility behavior in submicron MOSFETs in the temperature range of 77-300 K and found that the effective mobility as well as the field-effect mobility are less temperature dependent.
References
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Journal ArticleDOI
Vieillissement des transistors MOS submicroniques après contrainte électrique
TL;DR: In this article, Proprietes d'une nouvelle generation de transistors MOS, analysees en fonction de leurs tres faibles longueurs de canal, which varient entre 3 and 0,3 μ.