Journal ArticleDOI
Method for extracting deep submicrometre MOSFET parameters
TLDR
In this article, the authors present a new method which takes into account the effect of the lateral field to extract the deep submicrometre MOSFET parameters such as threshold voltage, effective channel length, effective mobility and parasitic series resistance.Abstract:
As the MOSFET channel length shrinks to 0.1 µm, the influence of the lateral field on the device characteristics becomes increasingly important even at low drain voltage (10 mV). The authors present a new method which takes into account the effect of the lateral field to extract the deep submicrometre MOSFET parameters such as threshold voltage, effective channel length, effective mobility and parasitic series resistance.read more
Citations
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Journal ArticleDOI
A review of recent MOSFET threshold voltage extraction methods
TL;DR: Several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics, focusing specially on single-crystal bulk MOSFETs are reviewed.
Journal ArticleDOI
Charge injection in solution-processed organic field-effect transistors: physics, models and characterization methods.
Dario Natali,Mario Caironi +1 more
TL;DR: A comprehensive overview on the subject of current injection in organic thin film transistors is offered: physical principles concerning energy level (mis)alignment at interfaces, models describing charge injection, technologies for interface tuning, and techniques for characterizing devices.
Journal ArticleDOI
Revisiting MOSFET threshold voltage extraction methods
Adelmo Ortiz-Conde,Francisco J. García-Sánchez,Juan Muci,Alberto Terán Barrios,Juin J. Liou,Juin J. Liou,Ching-Sung Ho +6 more
TL;DR: An up-to-date review of the several extraction methods commonly used to determine the value of the threshold voltage of MOSFETs, which includes the different methods that extract this quantity from the drain current versus gate voltage transfer characteristics measured under linear operation conditions for crystalline and non-crystalline MOSfETs.
Journal ArticleDOI
Controllable molecular modulation of conductivity in silicon-based devices.
Tao He,David A. Corley,Meng Lu,Neil Di Spigna,Jianli He,David P. Nackashi,Paul D. Franzon,James M. Tour +7 more
TL;DR: It is reported that a molecular monolayer, covalently grafted atop a silicon channel, can play a role similar to gating and impurity doping, which leads to the observed controllable modulation of conductivity in pseudometal-oxide-semiconductor field-effect transistors (pseudo-MOSFETs).
Journal ArticleDOI
Analytic model for organic thin film transistors (OTFTs): effect of contact resistances application to the octithiophene
TL;DR: In this article, the effects of non-ohmic contacts on the modeling of organic transistors and how to extract the real transistor parameters using only electrical measurements are discussed, and the authors demonstrate that both mobility and contact resistance depend on gate voltage and temperature.
References
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Journal ArticleDOI
New method for the extraction of MOSFET parameters
TL;DR: In this article, a new method for the extraction of the MOSFET parameters is presented, which relies on combining drain current and transconductance transfer characteristics, enabling reliable values of the threshold voltage V/sub t/, the low field mobility mu /sub 0/ and the mobility attenuation coefficient theta to be obtained.
Journal ArticleDOI
Measurement of MOSFET constants
TL;DR: In this article, a method is described to determine MOSFET channel length, mobility, gate bias dependence and parasitic series resistance by curve fitting output resistance measurements over a range of gate biases and channel lengths.
Journal ArticleDOI
A new approach to determine the drain-and-source series resistance of LDD MOSFET's
Steve S. Chung,J.-S. Lee +1 more
TL;DR: In this article, a method for determining the intrinsic drain-and-source series resistance and the effective channel length of LDD MOSFET's is proposed, based on the experimentally measured device I-V characteristics and a new parameter extraction procedure.
Journal ArticleDOI
A simple analytical model for hot-carrier MOSFETs
M. El-Banna,M. El-Nokali +1 more
TL;DR: In this article, a simple formula to calculate the output conductance without creating a discontinuity at the transition from the linear to the saturation region is proposed, and the accuracy of the model is confirmed by comparing its theoretical predictions with the experimental data available in the literature.