Journal ArticleDOI
Infrared and microwave magnetoplasma effects in semiconductors
E D Palik,Jacek K. Furdyna +1 more
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In this paper, the Boltzmann equation in the local approximation of the electromagnetic wave equation in a tensor medium yields two normal modes, whose complex propagation constants and polarizations are determined by the microscopic medium parameters as well as the angle θ between wave vector q and applied magnetic field B0.Abstract:
The interaction of electromagnetic waves with free-carrier plasmas in semiconductors and semimetals is analysed, with particular emphasis on microwave and infrared effects arising in the presence of external magnetic fields. The general frequency- and field-dependent dielectric tensor is initially developed for a single isotropic band via the Boltzmann equation in the local approximation. Solution of the electromagnetic wave equation in the tensor medium yields two normal modes, whose complex propagation constants and polarizations are determined by the microscopic medium parameters as well as the angle θ between wave vector q and applied magnetic field B0. We first consider wave propagation in the lossless (collisionless) limit, and concentrate on the properties of normal modes in the Faraday (q parallel B0) and Voigt (q perpendicular B0) geometries. Essential features of the wave interaction with the medium are conveniently set forth in `contour maps' which display zeroes and infinities of the lossless dielectric constants, indicating resonances, dielectric anomalies and black-out regions for each mode of propagation over a wide range of frequencies and fields. Losses are then explicitly incorporated into the dielectric tensor, and their effect discussed in some detail. A number of experimental examples associated with the single band model are presented, including free-carrier absorption, cyclotron resonance, Faraday and Voigt effects, helicon waves, magnetoplasma reflection and small-particle effects. The presentation is subsequently generalized to more complicated systems. The dielectric tensor is developed for a multiple-carrier plasma and for anisotropic bands. A variety of new effects is seen to arise, including hybrid resonances, tilted-orbit resonances and Alfven wave propagation. `Contour maps' of appropriate lossless dielectric constants are again found convenient in discussing these new features. Effects of spatial dispersion (nonlocal phenomena) and of orbital quantization on the high-frequency response of a free-carrier system are then considered. The contribution of the polar lattice, which gives rise to a vast array of coupled magnetoplasma-phonon modes, is finally examined. A further elaboration of certain topics arising in this review is presented in an appendix, including a detailed discussion of electron dynamics, the `polariton' formalism, fundamentals of Kramers-Kronig analysis and magneto-optics of birefringent media.read more
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Diluted magnetic semiconductors
TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
Journal ArticleDOI
Very large tunneling magnetoresistance in layered magnetic semiconductor CrI 3 .
Zhe Wang,Ignacio Gutiérrez-Lezama,Nicolas Ubrig,Martin Kroner,Marco Gibertini,Takashi Taniguchi,Kenji Watanabe,Atac Imamoglu,Enrico Giannini,Alberto F. Morpurgo +9 more
TL;DR: Large tunneling magnetoresistance is reported through exfoliated CrI3 crystals and its evolution is attributed to the multiple transitions to different magnetic states, demonstrating the presence of a strong coupling between transport and magnetism in magnetic van der Waals semiconductors.
Journal ArticleDOI
Spin dynamics in semiconductors
TL;DR: In this paper, the current status of spin dynamics in semiconductors is reviewed and a fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is comprehensively reviewed.
Journal ArticleDOI
Very Large Tunneling Magnetoresistance in Layered Magnetic Semiconductor CrI$_3$
Zhe Wang,Ignacio Gutiérrez-Lezama,Nicolas Ubrig,Martin Kroner,Marco Gibertini,Takashi Taniguchi,Kenji Watanabe,Atac Imamoglu,Enrico Giannini,Alberto F. Morpurgo +9 more
TL;DR: In this article, the authors show that tunneling conduction in the direction perpendicular to the crystalline planes exhibits a magnetoresistance as large as 10, 000 %, which is a new phenomenon that demonstrates the presence of a strong coupling between transport and magnetism in magnetic van der Waals semiconductors.
Journal ArticleDOI
Spin dynamics in semiconductors
TL;DR: In this paper, the current status of spin dynamics in semiconductors is reviewed, which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics.
References
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Light Scattering by Small Particles
H. C. Van de Hulst,V. Twersky +1 more
TL;DR: Light scattering by small particles as mentioned in this paper, Light scattering by Small Particle Scattering (LPS), Light scattering with small particles (LSC), Light Scattering by Small Parts (LSP),
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Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.
Journal ArticleDOI
A Collective Description of-Electron Interactions: III. Coulomb Interactions in a Degenerate Electron Gas
TL;DR: In this article, the behavior of the electrons in a dense electron gas is analyzed quantum-mechanically by a series of canonical transformations, and the results are related to the classical density fluctuation approach and Tomonaga's one-dimensional treatment of the degenerate Fermi gas.
Journal ArticleDOI
Infrared Absorption at Longitudinal Optic Frequency in Cubic Crystal Films
TL;DR: In this article, a strong infrared absorption band was observed in thin flat films of cubic ionic crystals and was found to be in good qualitative agreement with, but somewhat stronger than, the band predicted from a dielectric dispersion curve obtained from other types of measurements.