Proceedings ArticleDOI
Investigation of DC Parameters of Double Gate Tunnel Field Effect Transistor (DG- TFET) for different Gate Dielectrics
Surbhi Rathore,Indrani Bairagi,Lakshmi B +2 more
- pp 1-3
TLDR
In this article, the authors focused on the DC parameters of double gate tunnel field effect transistors (DGTFETs) and derived the I d -V g characteristic of the device.Abstract:
In this research we focused to study the DC parameters of Double Gate Tunnel Field Effect Transistor (DGTFET). To overcome the major challenges faced by the conventional MOSFET, a silicon-based TFET device structure is constructed with SiO 2 as gate dielectric using TCAD simulator. The I d -V g characteristic of the device is plotted and various DC parameters are extracted. The DC parameters considered here are leakage current (I off ), driving current (I on ) and threshold voltage (V t ). The plot of electrostatic potential and electron barrier tunneling are also depicted. The same study is carried out for high κ-dielectrics like Silicon Nitride (Si 3 N 4 ) and Hafnium Dioxide (HfO 2 ). The performance of DC parameters for various gate dielectrics is compared and studied.read more
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Journal ArticleDOI
Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric
Kathy Boucart,Adrian M. Ionescu +1 more
TL;DR: In this article, a double-gate tunnel field effect transistor (DG tunnel FET) with a high-kappa gate dielectric was proposed and validated using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average sub-threshold swing of 57 mV/dec, and a minimum point slope of 11 mV /dec.
Journal ArticleDOI
Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization
TL;DR: In this article, the double-gate tunneling field effect transistor (DG TFET) was explored through two dimensional device simulations and the on-state drain current of the DG TFET has a strong dependence on the silicon film thickness and the physics governing it is detailed.
Proceedings ArticleDOI
A novel concept for field-effect transistors - the tunneling carbon nanotube FET
Joachim Knoch,Joerg Appenzeller +1 more
Proceedings ArticleDOI
Double Gate Tunnel FET with ultrathin silicon body and high-k gate dielectric
K. Boucart,A.M. Ionescu +1 more
TL;DR: In this paper, a double gate tunnel field effect transistor (DG TFET) was proposed, which showed significant improvements compared with single gate devices with a SiO 2 gate dielectric.
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