Journal ArticleDOI
Issues in accelerated electromigration of solder bumps
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TLDR
The relentless progress of semiconductor integration is reducing the area required for circuits, and the area available for power and ground bumps on wafer-level chip-scale packages also shrinks and the bump current density is now approaching levels where electromigration is a significant reliability concern.About:
This article is published in Microelectronics Reliability.The article was published on 2003-12-01. It has received 64 citations till now. The article focuses on the topics: Electromigration.read more
Citations
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Journal ArticleDOI
Failure mechanisms of solder interconnects under current stressing in advanced electronic packages
Y.C. Chan,Dan Yang +1 more
TL;DR: A review of current stressing-induced failures of solder interconnects is presented in this paper, which summarizes recent progress and presents a critical overview of the basis of atomic transport, diffusion kinetics, morphological evolution, and numerical simulation.
Journal ArticleDOI
Electromigration issues in lead-free solder joints
Chih Chen,S. W. Liang +1 more
TL;DR: In this paper, the authors investigated the lifetime of Pb-free solders and found that the melting points of the solders are likely the dominant factor in determining EM lifetimes.
Journal ArticleDOI
Electromigration of Sn–37Pb and Sn–3Ag–1.5Cu/Sn–3Ag–0.5Cu composite flip–chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy
TL;DR: The electrothermal coupling analysis was employed to investigate the current crowding effect and maximum temperature in the solder bump in order to correlate with the experimental electromigration reliability using the Black’s equation as a reliability model.
Journal ArticleDOI
Electromigration study in the eutectic SnBi solder joint on the Ni/Au metallization
Long-tai Chen,Chih-Ming Chen +1 more
TL;DR: In this article, the eutectic SnBi solder joint with and without the current stressing of 6.5 × 103 A/cm2 at 70 °C for 5 to 15 days was investigated.
Journal ArticleDOI
Electromigration-induced Bi segregation in eutectic SnBi solder joint
TL;DR: In this article, the effect of current stressing on the Bi segregation at the anode side of the SnBi solder joint at 70°C was investigated, and the growth rate was significantly reduced due to the reduction of the density of the interphase boundary.
References
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Journal ArticleDOI
Grain size dependence of electromigration‐induced failures in narrow interconnects
J. Cho,Carl V. Thompson +1 more
TL;DR: In this paper, the median time to failure (MTTF) and deviation in the time to electromigration-induced failure (DTTF) of Al alloy thin-film lines are reported.
Proceedings ArticleDOI
Current Limitations of thin Film Conductors
TL;DR: In this article, the maximum current densities established by electromigration considerations are further limited by the product of the thicknesses of the conductor and the underlying dielectric thickness which determine conductor temperature gradients caused by the conductor rise in temperature above that of the substrate.
Journal ArticleDOI
Reliability phenomena under AC stress
TL;DR: In this paper, the authors reviewed the AC effects in hot-electron effect, electromigration, and gate oxide breakdown and stability and showed that AC effects become important to setting realistic reliability acceptance criteria and predicting circuit reliability as technology scaling gradually erodes the margin of safety.
Journal ArticleDOI
An empirical model for early resistance changes due to electromigration
TL;DR: In this paper, a new heuristic description for electromigration-induced early resistance changes is given, which is formed by two coupled partial differential equations, one for vacancies, and one for imperfections.
Journal ArticleDOI
Investigation of the temperature dependence in Black’s equation using microscopic electromigration modeling
TL;DR: In this article, the authors provide evidence for an additional T2 dependence of the failure time of the self-diffusion in pure metals, based on the assumption that the activation energy measured using Black's equation, Ea, should be equal to the energy barrier for atomic hopping.