Journal ArticleDOI
Large optical bandwidth and polarization insensitive semiconductor optical amplifiers using strained InGaAsP quantum wells
Hélène Carrère,Viet Giang Truong,Xavier Marie,Romain Brenot,G. de Valicourt,Francois Lelarge,Thierry Amand +6 more
TLDR
In this article, the material gain of equal width InGaAsP/InGaAsp multi-quantum well active layers is calculated solving the Luttinger-Kohn Hamiltonian, including tetragonal strain and confinement effects.Abstract:
The material gain of equal width InGaAsP/InGaAsP multi–quantum well active layers is calculated solving the Luttinger–Kohn Hamiltonian, including tetragonal strain and confinement effects. The calculated optical bandwidth reaches 150 nm with a maximum polarization sensitivity of 1 dB between transverse electric (TE) and transverse magnetic (TM) emission over the −3 dB optical bandwidth. The corresponding device characterized by amplified spontaneous emission measurements shows an optical bandwidth with constant TE/TM ratio of almost 100 nm which can be improved up to 113 nm by increasing the barrier material band gap energy. Further enlargement of the optical bandwidth is expected by reducing the quantum well width.read more
Citations
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Journal ArticleDOI
Broadband near total light absorption in non-PT-symmetric waveguide-cavity systems.
TL;DR: A compact non-parity-time-symmetric perfect absorber unit cell, consisting of two metal-dielectric-metal stub resonators with unbalanced gain and loss side-coupled to a MDM waveguide, based on unidirectional reflectionlessness at exceptional points is proposed.
Journal ArticleDOI
High-Power and High-Efficiency 1.3- $\mu\hbox{m} $ Superluminescent Diode With Flat-Top and Ultrawide Emission Bandwidth
TL;DR: In this article, a flat-top and ultrawide emission bandwidth of 125 nm from In-GaAsP/InP multiple quantum-well (MQW) superluminescent diode with antireflection coated and tilted ridge-waveguide device configuration was reported.
Journal ArticleDOI
Wide Optical Bandwidth and High Output Power Superluminescent Diode Covering C and L Band
Mickael Faugeron,Catherine Fortin,Yannick Robert,Eric Vinet,Francois Lelarge,Romain Brenot,Frederic van Dijk +6 more
TL;DR: In this paper, a superluminescent diode (SLD) design with high output power and a wide optical bandwidth operation is presented, which combines an asymmetrical cladding structure for reduced internal losses and thick quantum wells to obtain emission from both the fundamental level and the first excited level.
Journal ArticleDOI
Wideband Gain MQW-SOA Modeling and Saturation Power Improvement in a Tri-Electrode Configuration
TL;DR: In this paper, a semiphenomenological wideband model is proposed for both the material gain and the gain coefficient of a multiquantum well semiconductor optical amplifier (MQW-SOA).
Journal ArticleDOI
Wideband Steady-State Model of a Strained InGaAsP MQW-SOA
Michael J. Connelly,Simone Mazzucato,Hélène Carrère,Xavier Marie,Thierry Amand,M. Achouche,Christophe Caillaud,Romain Brenot +7 more
TL;DR: In this article, a steady-state model of a strained MQW-SOA is described and a least-squares fitting of the model to experimental polarization resolved amplified spontaneous emission spectra is used to obtain difficult to measure model parameters such as the linebroadening lineshape parameters, Auger recombination, bandgap shrinkage, and intervalence band absorption coefficients.
References
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Journal ArticleDOI
New k.p theory for GaAs/Ga 1-x A1 x As-type quantum wells
Journal ArticleDOI
Optical gain and gain suppression of quantum-well lasers with valence band mixing
Doyeol Ahn,Shun Lien Chuang +1 more
Abstract: The effects of valence band mixing on the nonlinear gains of quantum-well lasers are studied theoretically for the first time. The analysis is based on the multiband effective-mass theory and the density matrix formalism with intraband relaxation taken into account. The gain and the gain-suppression coefficient of a quantum-well laser are calculated from the complex optical susceptibility obtained by the density matrix formulation with the theoretical dipole moments obtained from the multiband effective-mass theory. The calculated gain spectrum shows that there are differences (both in peak amplitude and spectral shape) between this model with valence band mixing and the conventional parabolic band model. The shape of the gain spectrum calculated by the new model becomes more symmetric due to intraband relaxation together with nonparabolic energy dispersions. Optical intensity in the GaAs active region is estimated by solving rate equations for the stationary states with nonlinear gain suppression. >
Journal ArticleDOI
1.5 mu m multiquantum-well semiconductor optical amplifier with tensile and compressively strained wells for polarization-independent gain
Michael A. Newkirk,Barry Miller,Uziel Koren,M.G. Young,M. D. Chien,Robert M. Jopson,Charles A. Burrus +6 more
TL;DR: In this article, a multiquantum-well optical amplifier for 1.5-mu m wavelength operation using alternating tensile and compressively strained wells in the active region is described.
Journal ArticleDOI
Polarization insensitive multiple quantum well laser amplifiers for the 1300 nm window
L.F. Tiemeijer,P.J.A. Thijs,T. van Dongen,R. W. M. Slootweg,J. van der Heijden,J.J.M. Binsma,M. P. C. M. Krijn +6 more
TL;DR: In this article, a polarization insensitive (less than 1 dB gain difference over the 3 dB gain bandwidth) multiple quantum well laser amplifier for the 1300 nm window is reported for the first time, employing a single active layer containing three tensile strained and four compressively strained quantum wells and show a fiber to fiber gain of 16 dB at 1310 nm and 200 mA driving current.
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