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Journal ArticleDOI

Lithographic aerial-image contrast measurement in the extreme ultraviolet engineering test stand

Sang H. Lee, +2 more
- 09 Dec 2002 - 
- Vol. 20, Iss: 6, pp 2849-2852
TLDR
In this paper, the authors describe aerial-image contrast characterization for the extreme ultraviolet (EUV) Engineering Test Stand prototype EUV stepper using the resist-clearing (Kirk) method and compared to simulations based on the known system parameters.
Abstract
An important metric in determining both system and optic performance is aerial-image contrast. Here, we describe aerial-image contrast characterization for the extreme ultraviolet (EUV) Engineering Test Stand prototype EUV stepper. The system has been characterized operating with a developmental projection optic (the set-1 optic). Characterization was performed using the resist-clearing (Kirk) method and the results were compared to simulations based on the known system parameters. In this method, the image contrast is determined from the dose required to clear the bright features and the dose required to clear the dark features in a pattern of dense lines and spaces. Comparisons to simulations have shown discrepancies that increase as the contrast dose is reduced. Although various potential sources exist for these discrepancies (as described herein), analysis points to finite resist resolution as being the primary cause. An empirical model that accounts for finite resist resolution in aerial-image contrast measurements is presented.

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Citations
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EUV microexposures at the ALS using the 0.3-NA MET projectionoptics

TL;DR: In this paper, a programmable coherence illuminator was used to provide real-time pupil-fill control for the Berkeley Micro Exposure Tool (MET) with a dipole illumination out to {sigma}=1.
Proceedings ArticleDOI

EUV microexposures at the ALS using the 0.3-NA MET projection optics

TL;DR: The Berkeley exposure system programmable illuminator enables several unique capabilities as discussed by the authors, such as the ability to print feature sizes that are twice as small as those coded on the mask, and the capability to perform coherence studies such as line edge roughness (LER) and flare.
Journal ArticleDOI

Verification of point-spread-function-based modeling of an extreme-ultraviolet photoresist

TL;DR: This work shows point-spread-function-based resist modeling to be a viable technique at EUV wavelengths by directly comparing modeling results with a variety of printing metrics, including process windows and isodense bias.
Journal ArticleDOI

Extreme ultraviolet lithography capabilities at the advanced light source using a 0.3-NA optic

TL;DR: The Berkeley exposure tool as mentioned in this paper is a micro-exposure tool based on SEMATECH's 0.3numerical aperture microfield optic that was developed and implemented at Lawrence Berkeley National Laboratory, Berkeley, CA.
References
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Journal ArticleDOI

Contrast transfer function measurements of deep ultraviolet steppers

TL;DR: In this article, state-of-the-art deep ultraviolet steppers and some i-line steppers were compared by measuring the contrast transfer function, i.e., contrast versus linewidth.
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