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Journal ArticleDOI

LTPS TFT Process on Polyimide Substrate for Flexible AMOLED

Xiaoyu Gao, +3 more
- 16 Apr 2015 - 
- Vol. 11, Iss: 8, pp 666-669
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TLDR
In this paper, a process flow of LTPS TFT on PI substrate for flexible display application was discussed and a flexible display demo system was successfully made by optimizing the LTP TFT process.
Abstract
For conventional active-matrix organic light-emitting diode (AMOLED) flat panel displays, low temperature poly-silicon thin-film transistor (LTPS TFT) on rigid glass substrate process has already been well established. However, this technology cannot be applied directly on polyimide (PI) substrate for flexible display. This is because PI has the different coefficient of thermal expansion (CTE) from the glass, which will result in PI film peeling-off and/or warpage issues under conventional LTPS-TFT process technology. In this paper, a process flow of LTPS TFT on PI substrate for flexible display application was discussed. A flexible display demo system was successfully made by optimizing the LTPS TFT process.

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Citations
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Journal ArticleDOI

Synthesis of Superheat-Resistant Polyimides with High Tg and Low Coefficient of Thermal Expansion by Introduction of Strong Intermolecular Interaction

TL;DR: The development of polyimides with a superheat resistance and a high thermal dimensional stability is required urgently for application in the rapidly growing area of flexible display substra... as mentioned in this paper.
Journal ArticleDOI

Towards colorless polyimide/silica hybrids for flexible substrates

TL;DR: In this article, the authors report highly transparent flexible polyimide/silica hybrid with low coefficient of thermal expansion (CTE) comparable to that of a glass, low optical birefringence and high thermal stability over 400°C.
Journal ArticleDOI

Synthesis and characterization of optically transparent semi-aromatic polyimide films with low fluorine content

TL;DR: In this paper, a series of semi-aromatic polyimides with low fluorine content were prepared from alicyclic dianhydrides, i.e., 1,2,4,5-cyclohexane-tetracarboxylic dienhydride (CHDA) and bicyclo[2.2] octa-7-ene-2,3,5,6-Tetrac-arboxyl-dianhydride(BCDA), respectively.
Journal ArticleDOI

Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.

TL;DR: In this article, a bilayer IGZO channel structure consisting of a 10 nm base layer and a 3 nm boost layer was designed based on a cation combinatorial study of the ALD-derived TFTs with HfO2-based gate insulators.
Journal ArticleDOI

Flexible low-temperature polycrystalline silicon thin-film transistors

TL;DR: In this paper, a review of the development of the LTPS thin-film transistors (TFTs) on soft and flexible electronics, especially the effect of mechanical strain is presented.
References
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Journal ArticleDOI

Polymers for flexible displays: From material selection to device applications

TL;DR: In this paper, the kinds of polymers that are used, where and how polymer materials are used and the challenges to overcome in developing flexible displays are discussed and discussed in detail.
Journal ArticleDOI

Low-temperature polysilicon thin film transistors on polyimide substrates for electronics on plastic

TL;DR: In this article, a low-temperature polycrystalline silicon (LTPS) thin film transistor (TFT) fabrication process on polyimide (PI) layers is presented.
Journal ArticleDOI

An Advanced External Compensation System for Active Matrix Organic Light-Emitting Diode Displays With Poly-Si Thin-Film Transistor Backplane

TL;DR: In this article, an external compensation method for the nonuniform electrical characteristics of polycrystalline silicon thin-film transistors (TFTs) and the degradation of organic light-emitting diode (OLED) devices is proposed.
Journal ArticleDOI

LTPS-TFT Pixel Circuit to Compensate for OLED Luminance Degradation in Three-Dimensional AMOLED Display

TL;DR: In this article, a low-temperature polysilicon thin-film transistor pixel circuit for 3D active-matrix organic light-emitting diode (OLED) display and its driving scheme that is based on simultaneous emission at a frame rate of 240 Hz are proposed.
Journal ArticleDOI

Amorphous silicon back-plane electronics for OLED displays

TL;DR: Nathan et al. as discussed by the authors proposed an a-Si:H-based gate demultiplexer for active matrix organic light-emitting diode displays with high aperture ratio.
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