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Journal ArticleDOI

Measurement of Nonlinear Polarization of KTaO3 using Schottky Diodes

D. Kahng, +1 more
- 01 Sep 1965 - 
- Vol. 36, Iss: 9, pp 2925-2929
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TLDR
Capacitance vs bias voltage data are presented for Au-KTaO3 surface barrier Schottky diodes in this article, where substantial deviations from the normal Schottiness capacitance relationship have been observed and attributed to a field-dependent dielectric constant in the depletion layer.
Abstract
Capacitance vs bias voltage data are presented for Au–KTaO3 surface barrier Schottky diodes. Substantial deviations from the normal Schottky capacitance relationship have been observed and attributed to a field‐dependent dielectric constant in the depletion layer. From the capacitance data obtained at room temperature, e vs E and P vs E curves have been calculated for KTaO3 and found to be consistent with previous measurements made using conventional techniques at 4.2°K.

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Citations
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Journal ArticleDOI

Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions

TL;DR: An unintentional interface layer is identified as the origin of resistive switching in Pt/Nb:SrTiO3 junctions and it is shown that appropriate interface processing can eliminate this contribution.
Journal ArticleDOI

Intrinsic electrical properties of Au/SrTiO3 Schottky junctions

TL;DR: In this paper, the intrinsic electrical properties of Au/Nb-doped SrTiO3(001) (STO:Nb) Schottky junctions were investigated in detail.
Journal ArticleDOI

Fabrication and characterization of Ba1−xKxBiO3/Nb-doped SrTiO3 all-oxide-type Schottky junctions

TL;DR: A reproducible process for fabricating Ba1−xKxBiO3/Nb-doped SrTiO3 (BKBO/STNO) alloxide-type Schottky junctions has been established, and the electrical properties of the junctions have been investigated at room temperature.
Journal ArticleDOI

Photoelectrolysis of water by irradiation of platinized n-type semiconducting metal oxides☆

TL;DR: In this paper, the basic principles of semiconductor photoelectrochemistry as applied to light to chemical and/or electrical energy conversions are outlined and the role of the Pt coating is to reduce the H2 overvoltage to meet this requirement.
Journal ArticleDOI

Hydrogen induced tunnel emission in Pt/(BaxSr1−x)Ti1+yO3+z/Pt thin film capacitors

TL;DR: In this paper, the leakage current density-applied field (J−EA) characteristics of (BaxSr1−x)Ti1+yO3+z (BSTO) thin film capacitors with Pt electrodes that have been annealed in forming gas (95% Ar 5% H2 or D2) were investigated over the temperature range from −60 to +60
References
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Journal ArticleDOI

CIX. Theory of barium titanate—Part II

TL;DR: The phenomenological theory of barium titanate given in an earlier paper has been extended, and expressions obtained for the piezoelectric constants, elastic coefficients for constant field and dielectric constant for constant strain in terms of other physical constants of the material are drawn showing these quantities as functions of temperature as discussed by the authors.
Journal ArticleDOI

Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier System

TL;DR: In this paper, an expression for the differential capacitance of a metal contact to a semiconductor in which the bulk free carrier density is degenerate or near degenerate is derived.
Journal ArticleDOI

Some Transport Properties of Oxygen-Deficient Single-Crystal Potassium Tantalate (KTa O 3 )

TL;DR: In this paper, Hall-effect and electrical-conductivity measurements have been made on reduced single crystals of the perovskite potassium tantalate (KTa${\mathrm{O}}_{3}$) over the temperature range 1.6-295\ifmmode^\circ\else\text degree\fi{}K.
Journal ArticleDOI

Impurity Distribution in Epitaxial Silicon Films

TL;DR: In this article, a differential capacitance-voltage method for determining doping profiles in depth in epitaxial semiconductor films is described, in which the doping level generally is not flat but decreases with film thickness.
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