Journal ArticleDOI
Mechanisms of 1D crystal growth in reactive vapor transport: indium nitride nanowires.
Sreeram Vaddiraju,Aditya D. Mohite,Alan Chin,Meyya Meyyappan,Gamini Sumanasekera,Bruce W. Alphenaar,Mahendra K. Sunkara +6 more
TLDR
The direct nitridation of In droplets using dissociated ammonia results in the spontaneous nucleation and basal growth of nanowires directly from the In melt surface, which is quite different from the above-mentioned nucleation mechanism with the reactive vapor transport case.Abstract:
Indium nitride (InN) nanowire synthesis using indium (In) vapor transport in a dissociated ammonia environment (reactive vapor transport) is studied in detail to understand the nucleation and growth mechanisms involved with the so-called “self-catalysis” schemes. The results show that the nucleation of InN crystal occurs first on the substrate. Later, In droplets are formed on top of the InN crystals because of selective wetting of In onto InN crystals. Further growth via liquid-phase epitaxy through In droplets leads the growth in one dimension (1D), resulting in the formation of InN nanowires. The details about the nucleation and growth aspects within these self-catalysis schemes are rationalized further by demonstrating the growth of heteroepitaxially oriented nanowire arrays on single-crystal substrates and “tree-like” morphologies on a variety of substrates. However, the direct nitridation of In droplets using dissociated ammonia results in the spontaneous nucleation and basal growth of nanowires dir...read more
Citations
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Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
Journal ArticleDOI
Plasma nanoscience: from nano-solids in plasmas to nano-plasmas in solids
TL;DR: The unique plasma-specific features and physical phenomena in the organization of nanoscale soild-state systems in a broad range of elemental composition, structure, and dimensionality are critically reviewed in this paper.
Journal ArticleDOI
Plasma Nanoscience: from Nano-Solids in Plasmas to Nano-Plasmas in Solids
TL;DR: In this paper, a unified conceptual framework based on the control of production, transport, and self-organization of precursor species is introduced and a variety of plasma-specific non-equilibrium and kinetics-driven phenomena across the many temporal and spatial scales is explained.
Journal ArticleDOI
Band-Edge Engineered Hybrid Structures for Dye-Sensitized Solar Cells Based on SnO2 Nanowires
TL;DR: In this article, the authors showed that SnO2 nanowire-based dye-sensitized solar cells exhibit an open circuit voltage of 560mV, which is 200mV higher than that using nanoparticles.
Journal ArticleDOI
III-Nitride nanowire optoelectronics
TL;DR: In this article, the authors provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis.
References
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Optical bandgap energy of wurtzite InN
TL;DR: Wurtzite InN films were grown on a thick GaN layer by metalorganic vapor phase epitaxy as discussed by the authors, and growth of a (0001)-oriented single crystalline layer was confirmed by Raman scattering, x-ray diffraction, and reflection high energy electron diffraction.
Journal ArticleDOI
Synthesis of branched 'nanotrees' by controlled seeding of multiple branching events
Kimberly A. Dick,Knut Deppert,Magnus Larsson,Thomas Mårtensson,Werner Seifert,L. Reine Wallenberg,Lars Samuelson +6 more
TL;DR: It is shown, by high-resolution transmission electron microscopy, that the branching mechanism gives continuous crystalline (monolithic) structures throughout the extended and complex tree-like structures.
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Crystallographic alignment of high-density gallium nitride nanowire arrays
Tevye Kuykendall,Peter J. Pauzauskie,Yanfeng Zhang,Joshua E. Goldberger,Donald J. Sirbuly,Jonathan D. Denlinger,Peidong Yang,Peidong Yang +7 more
TL;DR: The use of metal–organic chemical vapour deposition (MOCVD) and appropriate substrate selection is demonstrated to control the crystallographic growth directions of high-density arrays of gallium nitride nanowires with distinct geometric and physical properties.
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Bulk synthesis of silicon nanowires using a low-temperature vapor–liquid–solid method
TL;DR: In this paper, the authors demonstrate a low-temperature vapor-liquid-solid synthesis method that uses liquid-metal solvents with low solubility for silicon and other elemental semiconductor materials.