Journal ArticleDOI
Memristive Properties of Transparent $({\rm La},\,{\rm Sr}){\rm MnO}_{3}$ Thin Films Deposited on ITO Glass at Room Temperature
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TLDR
Amorphous La1-xSrxMnO3 (a-LSMO) thin films were deposited on indium tin oxide (ITO) glass at room temperature by radio frequency magnetron sputtering as discussed by the authors.Abstract:
Amorphous La1-xSrxMnO3 (a-LSMO) thin films were deposited on indium tin oxide (ITO) glass at room temperature by radio frequency magnetron sputtering. The transmittance of a-LSMO (10 nm)/ITO/glass is 75% at 600 nm, which is promising for transparent memristors. The Ag/a-LSMO (10 nm)/ITO/glass memristor exhibits nonvolatile bipolar resistive switching properties with a resistance ratio , stable write/erase endurance , and long retention. The memristor can exhibit pinched hysteresis loops under high-frequency voltage excitations. These memristive properties are ascribed to diameter changes of the Ag nanofilament in the a-LSMO.read more
Citations
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Journal ArticleDOI
Bipolar Resistance Switching in Transparent ITO/LaAlO3/SrTiO3 Memristors
Shuxiang Wu,Lizhu Ren,Jian Qing,Fengmei Yu,Kungan Yang,Mei Yang,Yunjia Wang,M. Meng,Wenqi Zhou,Xiang Zhou,Shuwei Li +10 more
TL;DR: Reversible bipolar resistance switching behaviors in transparent indium-tin oxide (ITO)/LaAlO3/SrTiO3 memristors at room temperature exhibit high optical transparency, long retention, and excellent antifatigue characteristics.
Journal ArticleDOI
Modeling and Analysis of a Fractional-Order Generalized Memristor-Based Chaotic System and Circuit Implementation
TL;DR: A fractional-order generalized memristor, which consists of a diode bridge and a parallel circuit with an equivalent unit circuit and a linear resistance, is proposed, which will help to investigate the influence of the order on the dynamical behaviors of the fractional’s order-based chaotic systems.
Journal ArticleDOI
Defects induced resistive switching behavior in Ca doped YMnO3–based non–volatile memory devices through electronic excitations
Keval Gadani,Keval Gadani,K.N. Rathod,Davit Dhruv,V.G. Shrimali,Bhargav Rajyaguru,Joyce Joseph,A.D. Joshi,D. D. Pandya,K. Asokan,P.S. Solanki,Nikesh A. Shah +11 more
TL;DR: In this paper, defect induced structural, microstructural, resistive switching (RS) characteristics and related responsible charge conduction mechanisms of Y0·95Ca0·05MnO3 (YCMO) manganite films, grown on single crystalline (100 Nb:SrTiO3) substrates (0.2
Journal ArticleDOI
Effect of 200 MeV Ag+15 ion irradiation on structural, microstructural and dielectric properties of Y0·95Sr0·05MnO3 manganite films
Keval Gadani,Keval Gadani,K.N. Rathod,V.G. Shrimali,Bhargav Rajyaguru,Bhagyashree Udeshi,V.S. Vadgama,Davit Dhruv,A.D. Joshi,D. D. Pandya,K. Asokan,P.S. Solanki,Nikesh A. Shah +12 more
TL;DR: In this article, the dielectric response of pulsed laser deposition (PLD) grown Y0·95Sr0·05MnO3 (YSMO) thin films ( having two different thickness i.e. ~200 and 300 nm) on single crystalline Nb:SrTiO3 substrates was reported.
Journal ArticleDOI
Resistive Switching Behaviors in the BaTiO3/La0.7Sr0.3MnO3 Layered Heterostructure Driven by External Electric field
TL;DR: In this article, the nonvolatile and reversible resistive switching behavior of BaTiO3/La 0.7Sr 0.3MnO3 (BTO/LSMO) layered heterostructure have been observed.
References
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Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
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