Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction
Zhaoquan Zeng,Timothy Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Jian Wang,Zhiming Wang,Shui-Qing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo +13 more
TLDR
In this article, high quality Bi2Te3 and Sb2Te 3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy.Abstract:
High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.read more
Citations
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High-Responsivity, High-Detectivity, Ultrafast Topological Insulator Bi2Se3/Silicon Heterostructure Broadband Photodetectors
TL;DR: The successful preparation of high-quality topological insulator Bi2Se3/Si heterostructure having an atomically abrupt interface by van der Waals epitaxy growth of Bi2 Se3 films on Si wafer is reported.
Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films
TL;DR: In this article, the authors studied coherent electronic transport in charge-density-tunable microdevices patterned from thin films of the topological insulator (TI) Bi${}_{2}$Se${}_3}$.
Journal ArticleDOI
Optoelectronic characteristics of a near infrared light photodetector based on a topological insulator Sb2Te3 film
Kun Zheng,Lin-Bao Luo,Teng-Fei Zhang,Yu Hung Liu,Yong Qiang Yu,Rui Lu,Huai Li Qiu,Zhong Jun Li,J. C.Andrew Huang +8 more
TL;DR: In this paper, a near infrared (NIR) light photodetector based on a topological insulator antimony telluride (Sb2Te3) film, which was grown on sapphire by molecular beam epitaxy (MBE), was presented.
Journal ArticleDOI
Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review
TL;DR: In this paper, the authors reviewed recent progress in the growth of topological insulator (TI) thin films by molecular beam epitaxy (MBE) and discussed the bright future for TI film growth by MBE.
Journal ArticleDOI
Evidence for Magnetic Skyrmions at the Interface of Ferromagnet/Topological-Insulator Heterostructures.
Junshu Chen,Junshu Chen,Linjing Wang,Meng Zhang,Liang Zhou,Runnan Zhang,Lipeng Jin,Xue-sen Wang,Hailang Qin,Yang Qiu,Jia-Wei Mei,Fei Ye,Bin Xi,Hongtao He,Bin Li,Gan Wang +15 more
TL;DR: The atomistic spin-dynamics simulations have further confirmed the existence of magnetic skyrmions in such systems and revealed the presence of intercalated Bi bilayer nanosheets right at the interface of those samples.
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Experimental realization of a three-dimensional topological insulator, Bi2Te3
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