Journal ArticleDOI
nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs
TLDR
In this paper, a program to numerically simulate quantum transport in double gate metal oxide semiconductor field effect transistors (MOSFETs) is described, using a Green's function approach and a simple treatment of scattering based on the idea of so-called Buttiker probes.Abstract:
A program to numerically simulate quantum transport in double gate metal oxide semiconductor field effect transistors (MOSFETs) is described. The program uses a Green's function approach and a simple treatment of scattering based on the idea of so-called Buttiker probes. The double gate device geometry permits an efficient mode space approach that dramatically lowers the computational burden and permits use as a design tool. Also implemented for comparison are a ballistic solution of the Boltzmann transport equation and the drift-diffusion approaches. The program is described and some examples of the use of nanoMOS for 10 nm double gate MOSFETs are presented.read more
Citations
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Journal ArticleDOI
Theory of ballistic nanotransistors
TL;DR: In this paper, numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors, and the model reduces to Natori's theory of the ballistic MOSFET.
Journal ArticleDOI
Photocurrent imaging and efficient photon detection in a graphene transistor
Fengnian Xia,Thomas Mueller,Roksana Golizadeh-Mojarad,Marcus Freitag,Yu-Ming Lin,James C. Tsang,Vasili Perebeinos,Phaedon Avouris +7 more
TL;DR: It is shown that at a certain gate bias, the impact of the metal on the channel potential profile extends into the channel for more than one-third of the total channel length from both source and drain sides; hence, most of the channel is affected by the metal.
Journal ArticleDOI
Modeling of Nanoscale Devices
TL;DR: An introduction to the nonequilibrium Green's function (NEGF) approach, which is a powerful conceptual tool and a practical analysis method to treat nanoscale electronic devices with quantum mechanical and atomistic effects.
Journal ArticleDOI
A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions
TL;DR: In this article, a 3D simulation framework based on the nonequilibrium Green's function formalism was developed to handle electronic transport in nanoscale silicon devices within the effective mass and Hartree approximations.
References
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Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
Electronic Transport in Mesoscopic Systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
Journal ArticleDOI
Logic circuits with carbon nanotube transistors
TL;DR: This work demonstrates logic circuits with field-effect transistors based on single carbon nanotubes that exhibit a range of digital logic operations, such as an inverter, a logic NOR, a static random-access memory cell, and an ac ring oscillator.
Journal ArticleDOI
Four-terminal phase-coherent conductance.
TL;DR: A conductance formula for a sample of arbitrary shape with four terminals is derived to describe transport in the limit where carriers can traverse the sample without suffering phase-destroying events.