Proceedings ArticleDOI
Novel wide band gap devices using strain energy band engineering
M.S. Shur,R. Gaska,A. Khan +2 more
- pp 1-6
TLDR
In this article, the authors consider the application of this approach to novel AlN/GaN/InN-based field effect transistors and ultraviolet light emitting diodes.Abstract:
Strain and polarization control achieved via strain energy band engineering is the key for achieving stable and reliable operation of wide bad gap devices. In this paper, we consider the application of this approach to novel AlN/GaN/InN-based field effect transistors and ultraviolet light emitting diodes.read more
References
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Journal ArticleDOI
InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
Shuji Nakamura,Masayuki Senoh,Shinichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto,Tokuya Kozaki,Hitoshi Umemoto,Masahiko Sano,Kazuyuki Chocho +11 more
TL;DR: In this paper, a GaN multi-quantum well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN (ELOG) substrate was demonstrated to have a lifetime of more than 1150 h under room-temperature continuous-wave operation.
Journal ArticleDOI
The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structure
TL;DR: In this paper, it was shown that strongly pronounced piezoelectric properties play a key role in GaN−AlN−GaN semiconductor-insulator-semiconductor (SIS) and related structures.
Journal ArticleDOI
Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy
TL;DR: In this article, the authors investigated the modification of the electronic band structure in wurtzite GaN due to biaxial strain within the M plane using photoreflectance (PR) spectroscopy.
Journal ArticleDOI
High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates
Eric Frayssinet,Wojciech Knap,P. Lorenzini,Nicolas Grandjean,Jean Massies,Czeslaw Skierbiszewski,Tadeusz Suski,Izabella Grzegory,S. Porowski,Grigory Simin,Xiaobo Sharon Hu,M. Asif Khan,Michael Shur,Remigijus Gaska,Duncan K. Maude +14 more
TL;DR: In this paper, the Shubnikov de Hass oscillations and the low-temperature electron mobility were analyzed to find the quantum and transport scattering times to be 0.4 and 8.2 ps, respectively, indicating that the main scattering mechanisms, at low temperatures, are due to long-range potentials of ionized impurities.
Journal ArticleDOI
Growth of M-plane GaN(1 1̄ 0 0) on γ-LiAlO2(1 0 0)
TL;DR: Using RF plasma-assisted molecular beam epitaxy, the authors succeeded in the growth of GaN(1.1 ǫ 0.0) on γ-LiAlO 2 (1.0), and the crystal orientation and structural properties of 1.5μm thick GaN films are investigated by means of reflection high-energy electron diffraction, X-ray diffraction and Raman scattering.