Journal ArticleDOI
Ohmic contacts to GaAs
TLDR
In this article, the present capability of obtaining ohmic contacts to GaAs over a range of doping levels is reviewed and possible models of transport across the metal-semiconductor interface are discussed and contact techniques are described.About:
This article is published in Thin Solid Films.The article was published on 1983-06-24. It has received 61 citations till now. The article focuses on the topics: Ohmic contact & Contact resistance.read more
Citations
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Journal ArticleDOI
Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact to n-type GaAs
TL;DR: In this article, a cross-sectional transmission electron microscopy was used to explore the uniformity at the metal/GaAs interface and the thermal stability of the AuNiGe contact after the ohmic contact formation.
Journal ArticleDOI
Phase equilibria in metal‐gallium‐arsenic systems: Thermodynamic considerations for metallization materials
TL;DR: In this article, a classification scheme for phase equilibria in elemental metal-gallium-arsenic systems is proposed, which assigns as many metals as possible to seven generic types of ternary phase diagrams.
Journal ArticleDOI
Non‐alloyed ohmic contact to n‐GaAs by solid phase epitaxy
TL;DR: In this article, a non-alloyed ohmic contact to n-type GaAs has been demonstrated and the technique of solid phase epitaxy through a transport medium has been used to obtain a metal/Ge(n+, epi)/GaAs(n, 〈100〉) heterostructure.
Journal ArticleDOI
Ge redistribution in solid‐phase Ge/Pd/GaAs ohmic contact formation
C. J. Palmstro,S. A. Schwarz,Eli Yablonovitch,J. P. Harbison,C. L. Schwartz,L. T. Florez,T. J. Gmitter,E. D. Marshall,S. S. Lau +8 more
TL;DR: In this paper, a backside secondary ion mass spectrometry technique is employed to examine elemental redistribution in the Ge/Pd/GaAs ohmic contact as a function of annealing conditions.
Journal ArticleDOI
A controllable mechanism of forming extremely low‐resistance nonalloyed ohmic contacts to group III‐V compound semiconductors
G. Stareev,H. Künzel,G. Dortmann +2 more
TL;DR: In this article, a mechanism of forming extremely low-resistance nonalloyed Ti/Pt/Au ohmic contacts to a variety of III-V compound semiconductors, e.g., InGaAs, InAs, and GaAs, is presented.
References
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Journal ArticleDOI
Surface States and Barrier Height of Metal‐Semiconductor Systems
A. M. Cowley,S. M. Sze +1 more
TL;DR: In this paper, the dependence of the barrier height of metal-semiconductor systems upon the metal work function is derived based on the following assumptions: (1) the contact between the metal and the semiconductor has an interfacial layer of the order of atomic dimensions; it is further assumed that this layer is transparent to electrons with energy greater than the potential barrier but can withstand potential across it.
Journal ArticleDOI
Models for contacts to planar devices
TL;DR: In this article, two basic models for rectangular contacts to planar devices, the Kennedy-Murley Model (KMM) and the Transmission Line Model (TLM), are discussed and compared.
Journal ArticleDOI
Obtaining the specific contact resistance from transmission line model measurements
G.K. Reeves,H.B. Harrison +1 more
TL;DR: In this article, it was shown that the contact end resistance and the consequent specific contact resistance can be deduced from simple resistance measurements carried out between contacts on a standard, transmission line model test pattern.
Journal ArticleDOI
Ohmic contacts for GaAs devices
R.H. Cox,H.A. Strack +1 more
TL;DR: In this paper, the specific contact resistance on thin epitaxial layers of GaAs was evaluated and the highest value was 1 × 10 −3 ω-cm 2 measured on 0.6 −2.6 ω -cm n -type GaAs.
Journal ArticleDOI
Specific contact resistance of metal-semiconductor barriers
TL;DR: In this article, the specific contact resistance at zero bias, R c, is calculated for metal-Si and metal-GaAs barriers on p-type and n-type samples.