Operation of terahertz quantum-cascade lasers at 164 K in pulsed mode and at 117 K in continuous-wave mode.
Reads0
Chats0
TLDR
The demonstration of a terahertz quantum-cascade laser that operates up to 164 K in pulsed mode and 117 K in continuous-wave mode at approximately 3.0 THz is reported.Abstract:
We report the demonstration of a terahertz quantum-cascade laser that operates up to 164 K in pulsed mode and 117 K in continuous-wave mode at approximately 3.0 THz. The active region was based on a resonant-phonon depopulation scheme and a metal-metal waveguide was used for modal confinement. Copper to copper thermocompression wafer bonding was used to fabricate the waveguide, which displayed improved thermal properties compared to a previous indium-gold bonding method.read more
Citations
More filters
Proceedings ArticleDOI
Charge-Sensitive Infrared Phototransisotrs: Ultra-sensitive Detectors in the Wavelength Range of 5-50µm
Takeji Ueda,Susumu Komiyama +1 more
TL;DR: In this article, charge-sensitive infrared phototransistors (CSIPs) fabricated in GaAs/AlGaAs double quantum well structures are used for counting single photons, while a function is similarly to CMOS image sensors.
Proceedings ArticleDOI
High-temperature and high-power terahertz quantum cascade lasers
TL;DR: In this paper, the authors report the demonstration of terahertz QCLs based on a two-phonon depopulation scheme, intended to improve the high-temperature performance.
Dissertation
Integrated System and Component Technologies for Fiber-Coupled MM-Wave/THz Systems
TL;DR: In this paper, low cost fabrication technologies for various parts of mmWave/THz systems are investigated and explored to realize compact, integrated, and rugged components, which are attributed to the robustness, compactness, and a low cost device.
Proceedings Article
Indirectly pumped THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy
TL;DR: In this paper, the operation of indirectly pumped InGaAs/InAlAs THz quantum-cascade lasers of which active/injector structures were grown by MOVPE was presented.
Proceedings ArticleDOI
Waveguide design for bi-modal operation of THz quantum cascade lasers
S. G. Razavipour,Saeed Fathololoumi,Gholamreza Z. Rafi,Dayan Ban,S. Safavi-Naeini,S. R. Laframboise,Z. R. Wasilewski,H. C. Liu +7 more
TL;DR: In this article, the design and fabrication of a bi-modal semi-insulating surface-plasmon waveguide for a quantum cascade laser emitting at 3.75 THz is presented.
References
More filters
Terahertz semiconductor heterostructure laser
R. Kohler,Alessandro Tredicucci,Fabio Beltram,Harvey E. Beere,Edmund H. Linfield,Giles Davies,David A. Ritchie,Rita Claudia Iotti,Fausto Rossi +8 more
TL;DR: In this article, a monolithic terahertz injection laser that is based on interminiband transitions in the conduction band of a semiconductor (GaAs/AlGaAs) heterostructure is presented.
Journal ArticleDOI
Semiconducting and other major properties of gallium arsenide
TL;DR: In this paper, the authors provide numerical and graphical information about many physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material, including properties of the material itself, and the host of effects associated with the presence of specific impurities and defects is excluded from coverage.
Journal ArticleDOI
3.4-THz quantum cascade laser based on longitudinal-optical-phonon scattering for depopulation
TL;DR: In this article, a quantum cascade laser at λ=87.2 µm was developed for electron depopulation at 3.44 THz and 14.2 meV photon energy.
Journal ArticleDOI
Terahertz quantum-cascade laser at λ≈100 μm using metal waveguide for mode confinement
TL;DR: In this article, a double-sided metal waveguide was used for lasing at ∼3.0 ε-THz (λ≈98-102 µm) in a quantum-cascade structure.
Journal ArticleDOI
Resonant tunneling in quantum cascade lasers
TL;DR: In this article, an equation for the current density based on a tight-binding approximation is proposed to obtain a quasi-equilibrium between the population of the injector ground state and that of the excited state of the laser transition characterized by a common quasi-Fermi level.