Journal ArticleDOI
Optical Selection Rules for Hexagonal GaN
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In this article, the authors determined the possible symmetries for band (Bloch) states at various points of the Brillouin zone and the spin-orbit interaction has been taken into account.Abstract:
We determined the possible symmetries for band (Bloch) states at various points of the Brillouin zone. The spin–orbit interaction has been taken into account. Free excitons offer larger sets of possible state symmetries than single carriers do. The selection rules for the optical transitions have been established. Experiments with polarized light are shown to be relevant to study the nature (s or p) of A, B, and C excitons.read more
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Journal ArticleDOI
Structure, energetics, and electronic states of III-V compound polytypes
Friedhelm Bechstedt,A. Belabbes +1 more
TL;DR: A unified picture of the III-V polytypes and their heterocrystalline structures is developed and several contradictory results in the literature are developed.
Journal ArticleDOI
Untangling the Electronic Band Structure of Wurtzite GaAs Nanowires by Resonant Raman Spectroscopy
TL;DR: It is demonstrated that resonant Raman scattering is an important tool to probe the electronic structure of novel materials and elucidate the band structure of wurtzite GaAs at the Γ point.
Journal ArticleDOI
Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress
G. Signorello,Emanuel Lörtscher,Petr Khomyakov,Siegfried Karg,D L Dheeraj,Bernd Gotsmann,Helge Weman,Heike Riel +7 more
TL;DR: It is shown that the luminescence of WZ GaAs nanowires can be switched on and off, by inducing a reversible direct-to-pseudodirect band structure transition, under the influence of a small uniaxial stress.
Journal ArticleDOI
Overview of band-edge and defect related luminescence in aluminum nitride
TL;DR: In this paper, the authors present an overview of the published results describing near band-edge and defect related luminescence in aluminum nitride, also presenting findings from theoretical reports investigating band-structure, intrinsic defects or foreign impurities.
Journal ArticleDOI
Anisotropic photonic properties of III–V nanowires in the zinc-blende and wurtzite phase
Christophe E. Wilhelm,Christophe E. Wilhelm,Alexandre Larrue,Xing Dai,Dmitri B. Migas,Cesare Soci,Cesare Soci +6 more
TL;DR: Some critical aspects of the anisotropic absorption and emission properties of quasi one-dimensional structures are reviewed in the context of III-V compound semiconductor nanowires.
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