Journal ArticleDOI
P‐1.5: Fabrication of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors with Submicron Channel Length
Yunkai Cao,Huan Yang,Shengdong Zhang +2 more
- Vol. 50, pp 650-653
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The article was published on 2019-10-04. It has received 1 citations till now. The article focuses on the topics: Amorphous solid & Thin-film transistor.read more
Citations
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Journal ArticleDOI
Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors.
Katie Stallings,Jeremy Smith,Yao Chen,Li Zeng,Binghao Wang,Gabriele Di Carlo,Michael J. Bedzyk,Antonio Facchetti,Tobin J. Marks +8 more
TL;DR: A metal oxide semiconductors such as amorphous indium gallium zinc oxide (a-IGZO) have made impressive strides as alternatives to amorphus silicon for electronics applications as mentioned in this paper.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Proceedings ArticleDOI
180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications
Sanghun Jeon,Sung-Ho Park,I-hun Song,Ji-Hyun Hur,Jae-Chul Park,Sunil Kim,Sang-Wook Kim,Huaxiang Yin,Eunha Lee,Seung-Eon Ahn,Ho-Jung Kim,Chang-Jung Kim,U-In Chung +12 more
TL;DR: In this paper, a novel hybrid complementary metal oxide semiconductor (CMOS) image sensor architecture utilizing nanometer scale amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFT) combined with a conventional Si photo diode was proposed.
Journal ArticleDOI
Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking Memory
Ihun Song,Sunil Kim,Huaxiang Yin,Chang Jung Kim,Jae-Chul Park,Sang-Wook Kim,Hyuk Soon Choi,Eunha Lee,Youngsoo Park +8 more
TL;DR: Amorphous gallium-indium-zincoxide (GIZO) thin film transistors with short channels of 50 nm were successfully fabricated by e-beam lithographic patterning as discussed by the authors.
Proceedings Article
A novel BEOL transistor (BETr) with InGaZnO embedded in Cu-interconnects for on-chip high voltage I/Os in standard CMOS LSIs
TL;DR: In this paper, a novel BEOL transistor (BETr) is developed in Cu interconnects with wide band-gap InGaZnO (IGZO) film for on-chip high voltage I/Os in standard CMOS LSIs only by one additional mask.