Journal ArticleDOI
Photoluminescence of high porosity and of electrochemically oxidized porous silicon layers
A. Bsiesy,J. C. Vial,F. Gaspard,R. Herino,M. Ligeon,F. Muller,R. Romestain,A. Wasiela,A. Halimaoui,G. Bomchil +9 more
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TLDR
In this paper, it was shown that strong visible photoluminescence can be obtained directly from as-formed high-porosity porous silicon samples, without need for subsequent chemical dissolution.About:
This article is published in Surface Science Letters.The article was published on 1991-08-02. It has received 214 citations till now. The article focuses on the topics: Light emission & Nanocrystalline silicon.read more
Citations
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The structural and luminescence properties of porous silicon
TL;DR: A large amount of work world wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si as mentioned in this paper, and the key importance of crystalline Si nanostructures in determining the behaviour of porous si is highlighted.
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The origin of visible luminescencefrom “porous silicon”: A new interpretation
TL;DR: In this paper, the authors compared the luminescence and vibrational properties of anodically oxidized (porous) silicon and of chemically synthesized siloxene (Si 6 O 3 H 6 ) and its derivates.
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Mesoporous silicon in drug delivery applications.
TL;DR: The fabrication and chemical modifications of porous silicon for biomedical applications, and also the potential advantages of PSi in drug delivery are reviewed.
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Luminescence degradation in porous silicon
TL;DR: In this paper, the stability of the luminescence from porous Si in the presence of a variety of ambient gases (e.g., N2, H2, forming gas, and O2) was studied.
References
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Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TL;DR: In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
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Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
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Quantum size effects on photoluminescence in ultrafine Si particles
TL;DR: In this paper, it was shown that Si microcrystallites were embedded in a Si oxide matrix for the sample which emitted the light, and the inverse relation between emission energy and the square of the crystallite size indicates that carrier confinement in the Si micro-crystallite causes this photoluminescence phenomenon.
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Porosity and Pore Size Distributions of Porous Silicon Layers
TL;DR: In this article, the pore size distribution of porous silicon was investigated on different types of substrates and under different experimental conditions, and it was shown that porosity is strongly dependent on the type and resistivity of the original silicon substrate and on the electrochemical parameters used during anodization processes.
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An experimental and theoretical study of the formation and microstructure of porous silicon
TL;DR: In this paper, the formation and properties of porous silicon formed by anodising silicon under a wide range of conditions were investigated and the currentvoltage characteristics of the silicon-hydrofluoric acid system were presented.