Journal ArticleDOI
Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
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TLDR
In this article, the p-n junction GaN junction LED, which emits UV light and violet-blue light at RT, is fabricated for the first time, and the LEEBI treatment is found to be effective to lower the resistivity of the GaN:Mg, and to get the p type GaN.About:
This article is published in Journal of Luminescence.The article was published on 1991-01-01. It has received 288 citations till now. The article focuses on the topics: Electroluminescence & p–n junction.read more
Citations
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Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
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Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
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III–nitrides: Growth, characterization, and properties
TL;DR: In this article, the splitting of the valence band by crystal field and spin-orbit interaction has been calculated and measured, and the measured values agree with the calculated values and the effects of strain on the splitting and optical properties have been studied in detail.
Journal ArticleDOI
A revolution in lighting
TL;DR: Key materials discoveries have prompted the rise of inorganic light-emitting diodes in the lighting industry and remaining challenges are being addressed to further extend the impact of this technology in lighting, displays and other applications.
Patent
Nitride semiconductor device
Shinichi Nagahama,Masayuki Nichia Chemical Industries Ltd. Senoh,Shuji Nichia Chemical Industries Ltd. Nakamura +2 more
TL;DR: In this paper, the super lattice structure of a light emitting device (LED) was proposed to make working current and voltage of the device lower, resulting in realization of more efficient devices.
References
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Journal ArticleDOI
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
TL;DR: In this article, a thin AIN buffer layer was proposed to reduce the microscopic fluctuation in crystallite orientation and improve the crystalline quality of the GaN and Ga 1−x Al x N (0 x ≦ 0.4) films.
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Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE
TL;DR: Growth and luminescence properties of Mg-doped prepared by metal-organic vapor phase epitaxy, in which or is used as the Mg source gas, are reported for the first time.