Journal ArticleDOI
Photoluminescence studies in bulk gallium antimonide
TLDR
A detailed analysis of photo-luminescence spectroscopy (PL) on undoped and Te-and Zn-doped samples of high-quality GaSb is presented in this article.Abstract:
A detailed analysis of PhotoLuminescence spectroscopy (PL) on undoped and Te- and Zn-doped samples of high-quality GaSb is presented. Temperature variations of PL peak position and intensity have been used to find the origin of various transitions. The PL peaks of undoped samples have been assigned to unintentional impurities, native defects and excitons bound to the defect. The zinc- and tellurium-related peaks have been identified and the effect of doping concentration on their position and PL efficiency have been studied.read more
Citations
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Journal ArticleDOI
The physics and technology of gallium antimonide: An emerging optoelectronic material
TL;DR: The 3-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb is a promising material for high speed electronic and long wavelength photonic devices.
Journal ArticleDOI
Nature of compensating luminescence centers in Te-diffused and -doped GaSb
TL;DR: In this article, the luminescence centers in undoped p−GaSb have been identified and compared with the Te−doped bulk GaSb, and the reasons for the formation of various acceptor centers have been discussed.
Journal ArticleDOI
Growth and characterization of indium antimonide and gallium antimonide crystals
NK Udayashankar,H. L. Bhat +1 more
TL;DR: In this article, the effect of ampoule shapes and diameters on the crystallinity and homogeneity of indium antimonide and gallium antimide was studied.
Journal ArticleDOI
Carrier compensation and scattering mechanisms in p‐GaSb
TL;DR: In this paper, the hole transport properties of gallium antimonide with various degrees of tellurium compensation have been investigated in the temperature range of 4.2-300 K.
Journal ArticleDOI
Gallium antisite defect and residual acceptors in undoped GaSb
TL;DR: In this paper, the positron lifetime spectroscopy (PAS) and the coincident Doppler broadening (CDB) technique were combined to identify Ca vacancy (V-Ga) related defects by combining the CDB measurements.
References
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Materials aspects of GaAs and InP based structures
V. Swaminathan,A. T. Macrander +1 more
TL;DR: In this article, a comprehensive treatment of materials aspects of GaAs, InP and related alloys used in the fabrication of photonic and electronic devices is presented, including point defects and dislocations in III-V compounds.
Journal ArticleDOI
Gallium antimonide device related properties
TL;DR: The physical properties of GaSb are briefly presented and the device implications reviewed in this paper, where a direct gap semiconductor (0.72 eV) capable of being doped either p or n type with good mobilities and it has significant electrooptical potential in the near IR range.
Journal ArticleDOI
Growth properties of GaSb: The structure of the residual acceptor centres
TL;DR: In this article, the influence of direction of growth, melt composition and growth speed upon the relative occurrence of the residual acceptor centers in melt-grown GaSb single crystals was studied.
Journal ArticleDOI
Luminescence and photoconductivity of undoped p-GaSb
TL;DR: A doubly ionizable acceptor (EA = 34.5 meV, EC = 102 meV), which is responsible for the hole concentration in undoped GaSb, is identified by photoluminescence experiments at 2 K.