Journal ArticleDOI
Gallium antimonide device related properties
TLDR
The physical properties of GaSb are briefly presented and the device implications reviewed in this paper, where a direct gap semiconductor (0.72 eV) capable of being doped either p or n type with good mobilities and it has significant electrooptical potential in the near IR range.Citations
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The physics and technology of gallium antimonide: An emerging optoelectronic material
TL;DR: The 3-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb is a promising material for high speed electronic and long wavelength photonic devices.
Journal ArticleDOI
Antimonide-based compound semiconductors for electronic devices: A review
TL;DR: In this article, the progress on three antimonide-based electronic devices: high electron mobility transistors (HEMTs), resonant tunneling diodes (RTDs), and heterojunction bipolar transistors(HBTs) is reviewed.
Journal ArticleDOI
Quaternary InGaAsSb Thermophotovoltaic Diodes
M. W. Dashiell,J Beausang,H. Ehsani,G. Nichols,D.M. Depoy,L. R. Danielson,P. Talamo,K. D. Rahner,E. Brown,S. Burger,P. Fourspring,W.F. Topper,P. F. Baldasaro,Christine A. Wang,Robin K. Huang,Michael K. Connors,George W. Turner,Z. Shellenbarger,G. C. Taylor,Jizhong Li,Ramon U. Martinelli,D. Donetski,S. Anikeev,Gregory Belenky,Serge Luryi +24 more
TL;DR: In this paper, the performance of InGaAsSb thermophotovoltaic (TPV) diodes with front-surface spectral control filters was measured with thermal-to-electric conversion efficiency and power density (PD) of nTPV = 19.7% and PD = 0.58 W/cm2, respectively.
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Below bandgap optical absorption in tellurium-doped GaSb
TL;DR: In this paper, the effect of Te concentration on the transmission characteristics of GaSb has been experimentally and theoretically analyzed and the dependences of various absorption mechanisms as a function of wavelength have been discussed.
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Temperature-dependent GaSb material parameters for reliable thermophotovoltaic cell modelling
Diego Martín,Carlos Algora +1 more
TL;DR: In this article, a complete set of material parameters, including revised values for the intrinsic concentration, the electron and hole mobilities and the absorption coefficient, is given based on extended reviews of previously published data.
References
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Journal ArticleDOI
Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4‐μm optoelectronic device applications
TL;DR: In this article, the lattice constant, the lowest direct and indirect gap energies, and the refractive index of a quaternary lattice matched to GaSb and InAs were calculated using an interpolation scheme and the effects of compositional variations were properly taken into account in calculations.
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Empirical fit to band discontinuities and barrier heights in III–V alloy systems
Sandip Tiwari,David J. Frank +1 more
TL;DR: In this paper, the authors present a figure summarizing the variation of conduction band discontinuity, valence band and gold Schottky barrier height for binary and ternary III-V semiconductors.
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Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells
TL;DR: In this article, the electron concentrations and mobilities in deep (≊1.3 eV) AlSb/InAs/AlSb quantum wells grown by molecular-beam epitaxy were analyzed.
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Electronic properties of InAsGaSb superlattices
Leroy L. Chang,Leo Esaki +1 more
TL;DR: In this article, experimental results in InAs-GaSb superlattices are reviewed, focussing on the difference between this type of super-lattice and that of GaAsGa 1− x Al x As.
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Interband tunneling in polytype GaSb/AlSb/InAs heterostructures
TL;DR: In this article, the authors have demonstrated for the first time interband tunneling in single and double-barrier polytype heterostructures of GaSb and AlSb/InAs with a peak-to-valley ratio of 2.7:1 at 77 K.