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Photonic Floquet topological insulators

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TLDR
This work proposes and experimentally demonstrate a photonic topological insulator free of external fields and with scatter-free edge transport—a photonic lattice exhibiting topologically protected transport of visible light on the lattice edges.
Abstract
Topological insulators are a new phase of matter, with the striking property that conduction of electrons occurs only on their surfaces. In two dimensions, electrons on the surface of a topological insulator are not scattered despite defects and disorder, providing robustness akin to that of superconductors. Topological insulators are predicted to have wide-ranging applications in fault-tolerant quantum computing and spintronics. Substantial effort has been directed towards realizing topological insulators for electromagnetic waves. One-dimensional systems with topological edge states have been demonstrated, but these states are zero-dimensional and therefore exhibit no transport properties. Topological protection of microwaves has been observed using a mechanism similar to the quantum Hall effect, by placing a gyromagnetic photonic crystal in an external magnetic field. But because magnetic effects are very weak at optical frequencies, realizing photonic topological insulators with scatter-free edge states requires a fundamentally different mechanism-one that is free of magnetic fields. A number of proposals for photonic topological transport have been put forward recently. One suggested temporal modulation of a photonic crystal, thus breaking time-reversal symmetry and inducing one-way edge states. This is in the spirit of the proposed Floquet topological insulators, in which temporal variations in solid-state systems induce topological edge states. Here we propose and experimentally demonstrate a photonic topological insulator free of external fields and with scatter-free edge transport-a photonic lattice exhibiting topologically protected transport of visible light on the lattice edges. Our system is composed of an array of evanescently coupled helical waveguides arranged in a graphene-like honeycomb lattice. Paraxial diffraction of light is described by a Schrodinger equation where the propagation coordinate (z) acts as 'time'. Thus the helicity of the waveguides breaks z-reversal symmetry as proposed for Floquet topological insulators. This structure results in one-way edge states that are topologically protected from scattering.

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Journal ArticleDOI

Details of the topological state transition induced by gradually increased disorder in photonic Chern insulators.

TL;DR: The disorder-induced wave localizations almost have no influence on the one-way propagation of the original photonic topological states (PTSs), and the unidirectional nature of the PTSs at the edge area can survive even when the bulk states arise at stronger disorders.
Journal ArticleDOI

Interface states in polariton topological insulators

TL;DR: In this article, topological protection of the interface states in polariton condensates excited at the interface of the honeycomb and Lieb arrays of microcavity pillars in the presence of spin-orbit coupling and Zeeman splitting is discussed.
Journal ArticleDOI

Counter-propagating edge states in Floquet topological insulating phases

TL;DR: In this article, the authors present a theoretically simple Floquet topological insulating system that may possess an arbitrary number of counter-propagating chiral edge states and demonstrate the robustness of such edge states against symmetry preserving disorder.
Journal ArticleDOI

Photoinduced Topological Phase Transitions in Topological Magnon Insulators.

TL;DR: In this article, the photoinduced topological phase transitions in intrinsic topological magnon insulators in the kagome ferromagnets were studied using magnonic Floquet-Bloch theory and it was shown that periodically driven intrinsic topology magnetic materials can be manipulated into different topological phases with different sign of the Berry curvatures and the thermal Hall conductivity.
References
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New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance

TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
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Quantized Hall conductance in a two-dimensional periodic potential

TL;DR: In this article, the Hall conductance of a two-dimensional electron gas has been studied in a uniform magnetic field and a periodic substrate potential, where the Kubo formula is written in a form that makes apparent the quantization when the Fermi energy lies in a gap.
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