Journal ArticleDOI
Post-implantation annealing of SiC studied by slow-positron spectroscopies
G. Brauer,W. Anwand,Paul G. Coleman,J Störmer,Fernando Plazaola,J M Campillo,Y. Pacaud,Wolfgang Skorupa +7 more
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In this article, the effects of post-implantation annealing of damage in 6H-SiC caused by ion implantation at two different fluences have been studied by monoenergetic positron Doppler broadening and lifetime techniques.Abstract:
The effects of post-implantation annealing of damage in 6H-SiC caused by ion implantation at two different fluences have been studied by monoenergetic positron Doppler broadening and lifetime techniques. The measurements are supported by new calculations of positron lifetimes in vacancy clusters in SiC. At both fluences two defected layers are identified and characterized by depth and defect type as a function of annealing temperature. The results indicate that it is impossible to remove the radiation damage by annealing at temperatures up to .read more
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Design and Construction of a Slow Positron Beam for Solid and Surface Investigations
TL;DR: The slow positron beam SPONSOR at the Helmholtz-Centre Dresden-Rossendorf as discussed by the authors uses a 22Na source and consists of three main parts: (1) the source chamber with a thin film tungsten moderator used in transmission, and a pre-accelerator stage, (2) the vacuum system with magnetic transport, a bent tube for energy selection and an accelerator, (3) the sample chamber with sample holder, Ge detectors and facilities for remote control and data acquisition.
Journal ArticleDOI
Positron annihilation lifetime spectroscopy of ZnO bulk samples
A. Zubiaga,Fernando Plazaola,José Ángel García,Filip Tuomisto,Vicente Muñoz-Sanjosé,Ramón Tena-Zaera +5 more
TL;DR: In this article, positron annihilation lifetime spectroscopy was performed on bulk samples annealed under different atmospheres and two different vacancy-type defects were identified in the samples: Zn vacancy complexes (V{sub Zn}-X) and vacancy clusters consisting of up to five missing Zn-O pairs.
Journal ArticleDOI
Transient enhanced diffusion of implanted boron in 4H-silicon carbide
Martin S. Janson,Margareta K. Linnarsson,Anders Hallén,Bengt Gunnar Svensson,Nils Nordell,H. Bleichner +5 more
TL;DR: Experimental evidence for transient enhanced diffusion of boron (B) in ion-implanted silicon carbide (SiC) was given in this article, where the implanted B is diffusing several mu m into the samples when annealed at 1600...
Journal ArticleDOI
Vacancy-type defects in brown diamonds investigated by positron annihilation
V. Avalos,S. Dannefaer +1 more
TL;DR: In this article, five brown natural type IIa diamonds were found to contain concentrations of trapped monovacancy-type defects and large vacancy clusters that significantly exceed the vacancy content in colourless natural or synthetic type IIaa diamonds.
Journal ArticleDOI
Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H-SiC
Jonatan Slotte,Kimmo Saarinen,Martin S. Janson,Anders Hallén,A. Yu. Kuznetsov,Birte Svensson,Jennifer Wong-Leung,Chennupati Jagadish +7 more
TL;DR: In this paper, the Swedish Foundation for International cooperation in Research and Higher Education (STINT) and the Nordic Academy for Education and Research Training (NorFa) were jointly supported by the Nordic Institute for Education, Research Training, and Higher education.
References
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Journal ArticleDOI
Interaction of positron beams with surfaces, thin films, and interfaces
Peter J. Schultz,Kelvin G. Lynn +1 more
TL;DR: In this article, a review of advances in the study of solid surfaces and thin films using variable-energy positron beams is presented, with more emphasis on the most recent measurements and interpretations than on the chronology of various developments.
Journal ArticleDOI
Defect spectroscopy with positrons: a general calculational method
TL;DR: In this article, the positron potential is constructed from the full lattice electrostatic potential, and a local-density approximation for the correlation potential, in order to reliably predict annihilation characteristics for positrons trapped at defect clusters of varying size, geometry and impurity environment.
Journal ArticleDOI
Positronfit Extended: A New Version of a Program for Analysing Positron Lifetime Spectra
TL;DR: The POSITRONFIT EXTENDED extended version of this program is available from the CPC Program Library, Queen's Uni, Toronto, Ontario, Canada, Canada.
Journal ArticleDOI
Vacancy in Si: Successful description within the local-density approximation.
Osamu Sugino,Atsushi Oshiyama +1 more
TL;DR: The obtained Jahn-Teller distortion, the electronic structures, and the hyperfine coupling tensors are in good agreement with experimental data, indicating the validity of the one-electron theory, contrary to the prevailing picture based on model calculations.
Journal ArticleDOI
Positron studies of defects in ion-implanted SiC.
G. Brauer,W. Anwand,Paul G. Coleman,Andrew P. Knights,Fernando Plazaola,Y. Pacaud,Wolfgang Skorupa,J Störmer,P. Willutzki +8 more
TL;DR: Radiation damage caused by the implantation of 200 keV Ge{sup +} ions into 6H-SiC has been studied by monoenergetic positron Doppler broadening and lifetime techniques and suggests that the main defect produced is the divacancy, but that Si monovacancies are also created.