Patent
Power Semiconductor Devices
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TLDR
This invention generally relates to power semiconductor devices, and in particular to improved thyristor devices and circuits, which are particularly useful for so-called MOS-gated thyristors.Abstract:
This invention generally relates to power semiconductor devices, and in particular to improved thyristor devices and circuits. The techniques we describe are particularly useful for so-called MOS-gated thyristors. We describe a thyristor comprising a plurality of power thyristor devices connected in parallel, each said thyristor device being operable at a device current which the device has an on-resistance with a positive temperature coefficient.read more
Citations
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Journal ArticleDOI
Gan : processing, defects, and devices
TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Journal ArticleDOI
Trends in power semiconductor devices
TL;DR: In this paper, the authors review recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems and predict that silicon carbide based switches will begin to displace these silicon devices.
Journal ArticleDOI
An assessment of wide bandgap semiconductors for power devices
TL;DR: In this article, the authors derived new expressions for specific on-resistance in power semiconductor devices, such as heterojunction MOSFETs, using GaN and compared these new expressions to the previous literature.
Journal ArticleDOI
Fabrication and performance of GaN electronic devices
TL;DR: In this paper, the development of fabrication processes for these devices and the current state-of-the-art in device performance, for all of these structures, are discussed. And the authors also detail areas where more work is needed, such as reducing defect densities and purity of epitaxial layers, the need for substrates and improved oxides and insulators, improved p-type doping and contacts and an understanding of the basic growth mechanisms.
Proceedings ArticleDOI
A hybrid multilevel inverter topology for drive applications
Madhav Manjrekar,Thomas A. Lipo +1 more
TL;DR: In this paper, the authors investigated the feasibility of a 500hp induction motor drive based on a seven-level 4.5 kV hybrid inverter for high power drive applications.
References
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Journal ArticleDOI
The theory of p-n junctions in semiconductors and p-n junction transistors
TL;DR: The theory of potential distribution and rectification for p-n junctions is developed with emphasis on germanium, resulting in an admittance for a simple case varying as (1 + iωτ p )1/2 where τ p is the lifetime of a hole in the n-region.
Journal ArticleDOI
Trends in power semiconductor devices
TL;DR: In this paper, the authors review recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems and predict that silicon carbide based switches will begin to displace these silicon devices.
Proceedings ArticleDOI
The insulated gate rectifier (IGR): A new power switching device
TL;DR: In this paper, a new power semiconductor device called the Insulated Gate Rectifier (IGR) is described, which has the advantages of operating at high current densities while requiring low gate drive power.