E
Ekkanath Madathil Sankara Narayanan
Researcher at University of Sheffield
Publications - 79
Citations - 1488
Ekkanath Madathil Sankara Narayanan is an academic researcher from University of Sheffield. The author has contributed to research in topics: Power semiconductor device & Insulated-gate bipolar transistor. The author has an hindex of 15, co-authored 76 publications receiving 1124 citations. Previous affiliations of Ekkanath Madathil Sankara Narayanan include De Montfort University & University of Cambridge.
Papers
More filters
Journal ArticleDOI
The 2018 GaN power electronics roadmap
Hiroshi Amano,Yannick Baines,Matteo Borga,T Bouchet,Paul R. Chalker,Matthew Charles,Kevin J. Chen,Nadim Chowdhury,Rongming Chu,Carlo De Santi,Maria Merlyne De Souza,Stefaan Decoutere,L. Di Cioccio,Bernd Eckardt,Takashi Egawa,Patrick Fay,Joseph J. Freedsman,Louis J. Guido,Oliver Häberlen,Geoff Haynes,Thomas Heckel,Dilini Hemakumara,Peter A. Houston,Jie Hu,Mengyuan Hua,Qingyun Huang,Alex Q. Huang,Sheng Jiang,Hiroji Kawai,Dan Kinzer,Martin Kuball,Ashwani Kumar,K. B. Lee,Xu Li,Denis Marcon,Martin Marz,Robert McCarthy,Gaudenzio Meneghesso,Matteo Meneghini,Erwan Morvan,Akira Nakajima,Ekkanath Madathil Sankara Narayanan,Stephen Oliver,Tomas Palacios,Daniel Piedra,Marc Plissonnier,Rekha Reddy,Min Sun,Iain G. Thayne,A. Torres,Nicola Trivellin,Vineet Unni,Michael J. Uren,Marleen Van Hove,David J. Wallis,David J. Wallis,Jingshan Wang,Jinqiao Xie,Shuichi Yagi,Shu Yang,Chris Youtsey,Ruiyang Yu,Enrico Zanoni,Stefan Zeltner,Yuhao Zhang +64 more
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.
Journal ArticleDOI
Realizing high-voltage junction isolated LDMOS transistors with variation in lateral doping
TL;DR: In this paper, highvoltage lateral diffused metal-oxide semiconductor (LDMOS) transistors with a variation in the lateral doping (VLD) of drift regions are demonstrated in junction isolation technology using a fully implanted CDMOS process.
Journal ArticleDOI
A fast switching segmented anode NPN controlled LIGBT
TL;DR: In this paper, an ultrafast low energy loss lateral insulated gate bipolar transistor (LIGBT) with a novel segmented anode structure is demonstrated, which is simple to realize in a CDMOS process without the need for any additional process steps.
Journal ArticleDOI
Analysis of n-channel MOS-controlled thyristors
TL;DR: In this paper, the authors analyzed the turnoff of an n-channel MOS-controlled thyristor (NMCT) using two-dimensional simulation and found that the operation of a parasitic n-p-n transistor in NMCT-type structures degrades the forward voltage drop and the turn-off capability and hence should be suppressed.
Journal ArticleDOI
Comparative study of drift region designs in RF LDMOSFETs
Guangjun Cao,Sanjeev Kumar Manhas,Ekkanath Madathil Sankara Narayanan,M.M. De Souza,D. Hinchley +4 more
TL;DR: In this paper, the drift region design of the RF LDMOSFET in terms of breakdown voltage, on-resistance, transconductance, capacitance and hot-carrier effects is presented.