Journal ArticleDOI
Trends in power semiconductor devices
TLDR
In this paper, the authors review recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems and predict that silicon carbide based switches will begin to displace these silicon devices.Abstract:
This paper reviews recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems. In the case of low voltage ( 100 V) power rectifiers, the silicon P-i-N rectifier continues to dominate but significant improvements are expected by the introduction of the silicon MPS rectifier followed by the GaAs and SiC based Schottky rectifiers. Equally important developments are occurring in power switch technology. The silicon bipolar power transistor has been displaced by silicon power MOSFETs in low voltage ( 100 V) systems. The process technology for these MOS-gated devices has shifted from V-MOS in the early 1970s to DMOS in the 1980s, with more recent introduction of the UMOS technology in the 1990s. For the very high power systems, the thyristor and GTO continue to dominate, but significant effort is underway to develop MOS-gated thyristors (MCTs, ESTs, DG-BRTs) to replace them before the turn of the century. Beyond that time frame, it is projected that silicon carbide based switches will begin to displace these silicon devices.read more
Citations
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Patent
Power Semiconductor Devices
TL;DR: This invention generally relates to power semiconductor devices, and in particular to improved thyristor devices and circuits, which are particularly useful for so-called MOS-gated thyristors.
Journal ArticleDOI
Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate
TL;DR: In this paper, the authors investigated the breakdown (V/sub br/) enhancement potential of the field plate (FP) technique in the context of AlGaN/GaN power HEMTs.
Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TL;DR: AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.
Journal ArticleDOI
Reliability and performance limitations in SiC power devices
TL;DR: The performance and reliability issues unique to SiC discussed here include: (a) MOS channel conductance/gate dielectric reliability trade-off due to lower channel mobility as well as SiC–SiO2 barrier lowering due to interface traps; (b) reduction in breakdown field and increased leakageCurrent due to material defects; and (c) increased leakage current in SiC Schottky devices at high temperatures.
Journal ArticleDOI
Energy, environment, and advances in power electronics
TL;DR: In this paper, a review of the recent advances of power electronics that includes power semiconductor devices, converters, machines, drives and control is incorporated in the paper, and a prognosis for the 21st century has been outlined.
References
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Journal ArticleDOI
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
TL;DR: In this paper, the drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined.
Journal ArticleDOI
Power semiconductor device figure of merit for high-frequency applications
TL;DR: In this paper, the authors derived the Baliga high-frequency figure of merit for power semiconductor devices operating in high frequency circuits and showed that significant performance improvement can be achieved by replacing silicon with gallium arsenide, silicon carbide, or semiconducting diamond.
Patent
Power Semiconductor Devices
TL;DR: This invention generally relates to power semiconductor devices, and in particular to improved thyristor devices and circuits, which are particularly useful for so-called MOS-gated thyristors.
Journal ArticleDOI
Semiconductors for high‐voltage, vertical channel field‐effect transistors
TL;DR: In this paper, the influence of material parameters on the characteristics of vertical channel power field effect transistors is examined, and it is demonstrated that for devices with the same breakdown voltage and device structure, the onresistance is inversely proportional to the third power of the energyband gap and inversely proportion to the mobility.